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Vishay Siliconix SI4276DY-T1-E3 MOSFET 2N-CH 30V 8A 8SOIC
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Vishay Siliconix SI4276DY-T1-GE3 MOSFET 2N-CH 30V 8A 8SOIC
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SI4276DY Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SI4276DY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A SO8		Original	PDF		12
SI4276DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8-SOIC		Original	PDF		15

SI4276DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI4276DY Contextual Info: Si4276DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4276DY AN609, 19-May-10	PDF
SI4276DY Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21	Original	Si4276DY 2002/95/EC Si4276DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI4276DY Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21	Original	Si4276DY 2002/95/EC Si4276DY-T1-GE3 18-Jul-08	PDF
SI4276DY Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21	Original	Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI4276DY Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4	Original	Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY	PDF
Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4	Original	Si4276DY-T1-E3 2002/95/EC 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si4276 Abstract: SI4276DY Contextual Info: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4	Original	Si4276DY-T1-E3 2002/95/EC 150trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4276 SI4276DY	PDF
SI4276DY Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21	Original	Si4276DY 2002/95/EC Si4276DY-T1-GE3 11-Mar-11	PDF
SI4276DY Contextual Info: Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4 3.6 • Halogen-free According to IEC 61249-2-21	Original	Si4276DY 2002/95/EC Si4276DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI4276DY Contextual Info: SPICE Device Model Si4276DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4276DY 18-Jul-08	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF