SI4310BDY Search Results
SI4310BDY Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI4310BDY-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 7.5A 14SOIC | Original | 13 |
SI4310BDY Price and Stock
Vishay Siliconix SI4310BDY-T1-E3MOSFET 2N-CH 30V 7.5A 14SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4310BDY-T1-E3 | Reel | 2,500 |
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SI4310BDY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SI4310
Abstract: Si4310BDY
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Original |
Si4310BDY 2002/95/EC SO-14 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI4310 | |
max3572Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
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Si4310BDY 2002/95/EC SO-14 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 max3572 | |
Si4310BDYContextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14 |
Original |
Si4310BDY SO-14 08-Apr-05 | |
Si4310BDYContextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4310BDY 2002/95/EC SO-14 11-Mar-11 | |
Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4310BDY 2002/95/EC SO-14 18-Jul-08 | |
Si4310BDYContextual Info: SPICE Device Model Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4310BDY 18-Jul-08 | |
CI 3060 elsys
Abstract: Si4310BDY
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Original |
Si4310BDY SO-14 18-Jul-08 CI 3060 elsys | |
Si4310BDYContextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
Original |
Si4310BDY 2002/95/EC SO-14 11-Mar-11 |