SI4420 Search Results

Si4420BDY

Abstract: Si4420BDY-T1-E3 Si4420BDY-T1-GE3
Contextual Info: Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

fairchild NDS

Abstract: marking w66
Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4420DY

Contextual Info: Si4420DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4420DY-T1

Abstract: Si4420DY-T1-E3 SI4420BDY-T1-E3 Si4420DY Si4420BDY V5042
Contextual Info: Specification Comparison Vishay Siliconix Si4420BDY vs. Si4420DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 Summary of Performance:

5241

Abstract: AN609 Si4420BDY 147588
Contextual Info: Si4420BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4420BDY

Contextual Info: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4420BDY

Abstract: V3231
Contextual Info: SPICE Device Model Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4420BDY

Abstract: Si4420BDY-T1-E3
Contextual Info: Si4420BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free RoHS COMPLIANT SO-8 D S 1

Contextual Info: Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4420DY-T1-E3

Abstract: Si4420BDY Si4420BDY-T1-E3 Si4420DY Si4420DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4420BDY vs. Si4420DY Description: N-Channel, 30 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

small loop antenna

Abstract: bifa antenna printed antenna 868 AN421 RF pcb antenna 434 RF loop antenna 868 printed antenna design Si4320 Si4020 868mhz chip antenna
Contextual Info: AN422 Antenna Development Guide for the Si4020, Si4320 & Si4420 ISM Band FSK EZRadio Chipsets Application Note Version 1.51 1 2009, Silicon Laboratories, Inc. AN422 REV 1.51 1105 Silicon Laboratories, Inc. 400 Cesar Chavez Austin, TX 78701 Tel: 512.416.8500

Si4420DY

Abstract: power mosfet so8 FL
Contextual Info: PD - 93835 Si4420DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.009Ω T o p V ie w Description This N-channel HEXFET® power MOSFET is produced

Contextual Info: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4420DY

Contextual Info: Si4420DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4420BDY

Abstract: Si4420BDY-T1-E3
Contextual Info: Si4420BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free RoHS COMPLIANT SO-8 D S 1

Si4220

Abstract: SI4420 IA4420 automatic phase selector circuit diagram using microcontroller Si4420-IC 14 pin proportional rc toy receiver A680h RF transmitter 4 pin and 8 pin receiver Crystal oscillator 12 MHz program above rating afc
Contextual Info: Si4420 Universal ISM Band FSK Transceiver Si4420 PIN ASSIGNMENT DESCRIPTION Silicon Labs’ Si4420 is a single chip, low power, multi-channel FSK transceiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 315, 433, 868 and 915 MHz

Si4420DY

Contextual Info: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4420BDY-T1-E3

Abstract: Si4420BDY Si4420BDY-T1-GE3
Contextual Info: Si4420BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420DY

Contextual Info: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420DY Si4420DY-T1 (with Tape and Reel)