SI4435DY Search Results
SI4435DY Datasheets (14)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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Si4435DY |
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P-Channel Logic Level PowerTrench MOSFET | Original | 314.37KB | 6 | ||
SI4435DY |
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30V P-Channel PowerTrench MOSFET | Original | 90.81KB | 5 | ||
SI4435DY | International Rectifier | HEXFET Power MOSFET | Original | 88.41KB | 8 | ||
SI4435DY | Kexin | P-Channel MOSFET | Original | 182.46KB | 2 | ||
Si4435DY |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
Si4435DY | International Rectifier | HEXFET Power MOSFET | Scan | 328.64KB | 8 | ||
SI4435DY_NF073 |
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30V P-Channel PowerTrench MOSFET | Original | 90.82KB | 5 | ||
SI4435DY_NL |
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30V P-Channel PowerTrench MOSFET | Original | 90.82KB | 5 | ||
SI4435DYPBF | International Rectifier | HEXFET Power MOSFET | Original | 106.7KB | 8 | ||
SI4435DY-REVA | Vishay Telefunken | P-Channel 30-V (D-S) MOSFET | Original | 51.42KB | 4 | ||
SI4435DY-REVA | Siliconix | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8 | Scan | 41.73KB | 1 | ||
Si4435DY SPICE Device Model |
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P-Channel 30-V (D-S) MOSFET | Original | 177.58KB | 3 | ||
SI4435DYTR | International Rectifier | -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package | Original | 88.41KB | 8 | ||
SI4435DYTRPBF | International Rectifier | Original | 88.41KB | 8 |
SI4435DY Price and Stock
onsemi SI4435DYMOSFET P-CH 30V 8.8A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DY | Cut Tape | 30,685 | 1 |
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SI4435DY | Reel | 111 Weeks | 2,500 |
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SI4435DY | Cut Tape | 10,054 | 5 |
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SI4435DY | 996 | 8 |
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SI4435DY | 796 |
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SI4435DY | 1,963 | 1 |
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SI4435DY | 11,746 |
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Infineon Technologies AG SI4435DYTRPBFMOSFET P-CH 30V 8A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DYTRPBF | Cut Tape | 18,774 | 1 |
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SI4435DYTRPBF | Ammo Pack | 16 Weeks, 3 Days | 1 |
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SI4435DYTRPBF | 3,711 |
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SI4435DYTRPBF | Cut Tape | 118 | 1 |
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SI4435DYTRPBF | Bulk | 4,000 |
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SI4435DYTRPBF | 10 |
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SI4435DYTRPBF | 1,480 | 1 |
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SI4435DYTRPBF | 3,905 | 1 |
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SI4435DYTRPBF | 30 |
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SI4435DYTRPBF | Cut Tape | 8,381 | 0 Weeks, 1 Days | 5 |
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SI4435DYTRPBF | 14 Weeks | 4,000 |
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SI4435DYTRPBF | 3,393 |
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UMW SI4435DYMOSFET P-CH 30V 8.8A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DY | Digi-Reel | 2,001 | 1 |
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Infineon Technologies AG SI4435DYMOSFET P-CH 30V 8A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DY | Tube | 95 |
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Infineon Technologies AG SI4435DYTRMOSFET P-CH 30V 8A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DYTR | Reel | 4,000 |
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SI4435DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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7w66
Abstract: Si4435DY D665
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Si4435DY 7w66 D665 | |
Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
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Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94 | |
Si4435DYContextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si4435DY S-47958--Rev. 15-Apr-96 | |
Si4435DYContextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si4435DY S-47958--Rev. 15-Apr-96 | |
SI4435DY
Abstract: AN609 74549N
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Si4435DY AN609 31-Aug-05 74549N | |
S-49534
Abstract: Si4435DY
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Si4435DY S-49534--Rev. 06-Oct-97 S-49534 | |
IRF7101
Abstract: Si4435DYPbF
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Si4435DYPbF EIA-481 EIA-541. IRF7101 | |
S-49534
Abstract: Si4435DY
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Si4435DY S-49534--Rev. 06-Oct-97 S-49534 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
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Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 | |
Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
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Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
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Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96 | |
Si4435DY
Abstract: si4435
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SI4435DY Si4435DY si4435 | |
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SI4435DY
Abstract: SI4435DY-T1
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Si4435DY Si4435DY-T1 18-Jul-08 | |
PR40
Abstract: js27 C598 BKLVMAIN SFPJ-73 JS11
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SFPJ-73 DC2010 120Z/100M PC501 PQ506 DTC144WK PQ507 2N7002 LMV393 2N7002 PR40 js27 C598 BKLVMAIN JS11 | |
7w66Contextual Info: Si4435DY* P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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Si4435DY 7w66 | |
Si4435DYContextual Info: Si4435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.02 @ VGS = -10 V "8.0 0.035 @ VGS = -4.5 V "6.0 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si4435DY S45252Rev. | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
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Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361 | |
Si4435DY
Abstract: a2019
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Si4435DY S-51095Rev. 13-Jun-05 a2019 | |
Contextual Info: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from |
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Si4435DYPbF EIA-481 EIA-541. | |
IRF7101
Abstract: Si4435DYPbF
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Si4435DYPbF EIA-481 EIA-541. IRF7101 | |
Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
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Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent | |
Contextual Info: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive |
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SI4435DY |