SI4465 Search Results

74681

Abstract: 7815 7815 DATASHEET M 1357 AN609 Si4465ADY
Contextual Info: Si4465ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4465ADY

Abstract: 73856
Contextual Info: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET

Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

Si4465DY

Abstract: Si4465DY SPICE Device Model
Contextual Info: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1

Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET

Si4465ADY

Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

SI4465AD

Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

74100

Abstract: 74100 datasheet AN609 Si4465DY
Contextual Info: Si4465DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74278

Abstract: Si4465DY Si4465ADY Si4465DY-T1 SI4465ADY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4465ADY vs. Si4465DY Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET SO-8 Identical Part Number Replacements Si4465ADY-T1-E3 Replaces Si4465DY-T1-E3 Si4465ADY-T1-E3 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: SPICE Device Model Si4465ADY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si4465DY

Abstract: Si4465DY-T1
Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.009 @ VGS = - 4.5 V - 14 0.011 @ VGS = - 2.5 V - 12 0.016 @ VGS = - 1.8 V - 10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4465DY

Si4465ADY

Abstract: Si4465ADY-T1-GE3
Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

Si4465DY

Abstract: Si4465DY-T1
Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1

74239

Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4465DY

Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V "14 0.011 @ VGS = –2.5 V "12 0.016 @ VGS = –1.8 V "10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

Si4465ADY

Contextual Info: SPICE Device Model Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74212

Abstract: Si4465ADY
Contextual Info: SPICE Device Model Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SÌ4465PY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product v 0# m -8 r d s (ON) fQJ 0.009 9 Vqs = -4 -5 V ±1 4 0.011 9 Vqs = —2.5 V ±12 0.016 9 VGS = -1 .8 V ±1 0 9 ° \* A til SO-8 "It rm P-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S | T a

CMZ59448

Abstract: LTBSZ ltbnd diode G21 2A 100v LTC6101HV LTC2433-1 LTC6101 DC 5V to DC 100V CIRCUIT DIAGRAM 6101fa
Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

LEXAN 121r - 21051

Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Contextual Info: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F