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SI4666 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4666DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 16.5A 8-SOIC	Original	PDF		10

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Vishay Siliconix SI4666DY-T1-GE3 MOSFET N-CH 25V 16.5A 8SO
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DigiKey ()	SI4666DY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Vishay Intertechnologies SI4666DY-T1-GE3 (Alt: SI4666DY-T1-GE3)
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EBV Elektronik	SI4666DY-T1-GE3			21 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4666 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
si4666 Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4666DY 2002/95/EC Si4666DY-T1-GE3 18-Jul-08 si4666	PDF
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4666DY 2002/95/EC Si4666DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
66640 Abstract: si4666 S10-0920 Contextual Info: SPICE Device Model Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4666DY 18-Jul-08 66640 si4666 S10-0920	PDF
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4666DY 2002/95/EC Si4666DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SPICE Device Model Si4666DY www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4666DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si4666 Abstract: 4940 si46 Contextual Info: Si4666DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4666DY AN609, 07-Jun-10 si4666 4940 si46	PDF
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4666DY 2002/95/EC Si4666DY-T1-GE3 11-Mar-11	PDF
Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4666DY 2002/95/EC Si4666DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_00 Seiko Instruments Inc., 2013 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage	Original	S-8367/8368	PDF
Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_01 Seiko Instruments Inc., 2013-2014 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage	Original	S-8367/8368	PDF
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	VMN-PT0105-1007	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF