SI48 Search Results
SI48 Price and Stock
Vishay Siliconix SI4825DDY-T1-GE3MOSFET P-CH 30V 14.9A 8SO |
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SI4825DDY-T1-GE3 | Cut Tape | 22,837 | 1 |
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SI4825DDY-T1-GE3 | Bulk | 2,500 |
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SI4825DDY-T1-GE3 | 5,000 | 1 |
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Vishay Siliconix SI4848ADY-T1-GE3MOSFET N-CH 150V 5.5A 8SOIC |
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SI4848ADY-T1-GE3 | Digi-Reel | 3,415 | 1 |
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Vishay Siliconix SI4816BDY-T1-GE3MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC |
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SI4816BDY-T1-GE3 | Digi-Reel | 3,025 | 1 |
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SI4816BDY-T1-GE3 | 5,000 | 1 |
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Skyworks Solutions Inc SI4825-A10-CSRRF RX AM/FM 504KHZ-1.75MHZ SOIC |
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SI4825-A10-CSR | Cut Tape | 1,680 | 1 |
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SI4825-A10-CSR | 2,500 | 1 |
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SI4825-A10-CSR | 1 |
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Skyworks Solutions Inc SI4831-B30-GURF RX AM/FM 504KHZ-1.75MHZ SSOP |
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SI4831-B30-GU | Tray | 78 | 1 |
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SI4831-B30-GU | 8 | 1 |
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SI4831-B30-GU | 1 |
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SI48 Datasheets (416)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4800 |
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N-channel TrenchMOS logic level FET | Original | 91.22KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4800 |
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N-Channel Enhancement Mode Field-Effect Transistor | Original | 98.86KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800 |
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N-channel enhancement mode field-effect transistor | Original | 98.86KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800,518 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A SOT96-1 | Original | 12 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800BDY | Vishay Siliconix | MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p | Original | 98.71KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800BDY | Vishay Siliconix | MOSFETs | Original | 56.64KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4800BDY SPICE Device Model |
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N-Channel Reduced Qg, Fast Switching MOSFET | Original | 184.84KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800BDY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800BDY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4800DY | Vishay Intertechnology | N-Channel Reducded Q g , Fast Switching MOSFET | Original | 68.04KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800DY | Vishay Telefunken | N-Channel 30-V (D-S) MOSFET | Original | 41.71KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4800DY SPICE Device Model |
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N-Channel Reduced Qg, Fast Switching MOSFET | Original | 206.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4800DY-T1 | Vishay Intertechnology | N-Channel Reducded Q g , Fast Switching MOSFET | Original | 68.04KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4802DY | Unknown | Metal oxide N-channel FET, Enhancement Type | Original | 42.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Si4802DY | Vishay Intertechnology | N-Channel 30-V (D-S) MOSFET | Original | 69.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4802DY | Vishay Siliconix | MOSFETs | Original | 58.99KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4802DY-T1 | Vishay Intertechnology | N-Channel 30-V (D-S) MOSFET | Original | 69.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4804BDY | Vishay Siliconix | MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1; | Original | 98.71KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si4804BDY | Vishay Siliconix | Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison | Original | 30.27KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4804BDY | Vishay Siliconix | MOSFETs | Original | 61.51KB | 5 |
SI48 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized |
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Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI4850EY-t1g
Abstract: si4850
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Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850 | |
si4838Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated |
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Si4838DY Si4838DY-T1-E3 Si4838DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4838 | |
Si4842DY
Abstract: S-02445
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Si4842DY S-02445--Rev. 06-Nov-00 S-02445 | |
2sc9018Contextual Info: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2 |
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AN738 Si4825/36-A Si4825 Si4836 2sc9018 | |
Si4816BDY
Abstract: Si4816BDY-T1-E3
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Si4816BDY 08-Apr-05 Si4816BDY-T1-E3 | |
Si4866DY
Abstract: Si4866DY-T1-E3
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Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 11-Mar-11 | |
Si4800BDY-T1-E3
Abstract: Si4800BDY Si4800BDY-T1-GE3
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Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11 | |
Si4816DY
Abstract: Si4816DY-T1-E3
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Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3 | |
Si4888DY
Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
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Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 11-Mar-11 | |
Si4840DY
Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
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Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 11-Mar-11 US2050 | |
Contextual Info: SPICE Device Model Si4804DY Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse |
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Si4804DY | |
si4829Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 |
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Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829 | |
SI4823DYContextual Info: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4823DY 18-Jul-08 | |
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Contextual Info: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si4862DYContextual Info: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS |
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Si4862DY S-03596--Rev. 07-May-01 | |
Si4804CDY
Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3
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Si4804CDY Si4804BDY Si4804CDY-T1-GE3 Si4804BDY-T1-E3 20-Jul-09 | |
Si4818DYContextual Info: Si4818DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V 8.2 SCHOTTKY PRODUCT SUMMARY |
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Si4818DY S-00042--Rev. 24-Jan-00 | |
71142 a
Abstract: 71142 D Si4886DY
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Si4886DY 08-Apr-05 71142 a 71142 D | |
S99-041Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S |
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Si4884DY S99-041--Rev. 04-Oct-99 S99-041 | |
Contextual Info: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A |
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Si4810DY S-56946--Rev. 23-Nov-98 | |
Si4866BDY
Abstract: 71342
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Si4866BDY Si4866BDY-T1-E3 08-Apr-05 71342 | |
si4833a
Abstract: SI4833ADY
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Si4833ADY Si4833ADY-T1-E3 S-60428-Rev. 20-Mar-06 si4833a | |
Si4884DY
Abstract: Si4884DY-T1
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Si4884DY Si4884DY-T1 08-Apr-05 |