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Vishay Siliconix SI4829DY-T1-GE3 MOSFET P-CH 20V 2A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4829DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.19175	Buy Now
Vishay Intertechnologies SI4829DY-T1-E3 MOSFETs 20V 2.0A 3.1W 215mohm @ 4.5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4829DY-T1-E3					1 $0.66 10 $0.511 100 $0.382 1000 $0.239 10000 $0.184	Get Quote

SI4829 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SI4829DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2A 8-SOIC		Original	PDF		10
SI4829DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2A 8-SOIC		Original	PDF		10

SI4829 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
si4829 Contextual Info: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21	Original	Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829	PDF
Contextual Info: New Product Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested	Original	Si4829DY Si4829DY-T1-E3 18-Jul-08	PDF
mos 6550 Abstract: 6679 AN609 Contextual Info: Si4829DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4829DY AN609, 02-Jul-08 mos 6550 6679 AN609	PDF
mosfet B 1566 Contextual Info: SPICE Device Model Si4829DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4829DY 18-Jul-08 mosfet B 1566	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF