SI494 Search Results

*4947ad

Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4948EY

Contextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4940DY

Contextual Info: Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.7 0.059 @ VGS = 4.5 V 4.4 D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 1 8 D1 G1

Contextual Info: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS

Contextual Info: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

SI4940DY

Contextual Info: New Product Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.036 at VGS = 10 V 5.7 0.059 at VGS = 4.5 V 4.4 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT SO-8 D1 S1 1 8 D1

Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4948BEY

Contextual Info: SPICE Device Model Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4947ADY

Abstract: 39A2 Si4947ADY SPICE Device Model
Contextual Info: SPICE Device Model Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4946BEY-T1-E3

Abstract: Si4946BEY SI4946BEY-T1-GE3
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

AN609

Abstract: Si4943BDY
Contextual Info: Si4943BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI4943CDY

Contextual Info: SPICE Device Model Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range

Si4943DY

Contextual Info: Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) APPLICATIONS 0.019 @ VGS = - 10 V - 8.4 0.030 @ VGS = - 4.5 V - 6.7 D Load Switching - Computer - Game Systems

mosfet 9519

Abstract: 4017 SPICE MODEL 8206 AN609 Si4942DY 253027
Contextual Info: Si4942DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4947ADY

Abstract: Si4947ADY-T1
Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.080 @ VGS = - 10 V - 3.9 0.135 @ VGS = - 4.5 V - 3.0 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4947ADY

Si4947DY

Contextual Info: Si4947DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.085 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Si4948EY

Contextual Info: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET

Si4947DY

Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
Contextual Info: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8

si4944dy-t1-e3

Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT

Si4944DY

Contextual Info: SPICE Device Model Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4940DY

Contextual Info: SPICE Device Model Si4940DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si9947DY

Abstract: Si4947DY Si4953DY Si6955DQ si6955
Contextual Info: Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ