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    SI4980DY Price and Stock

    Vishay Intertechnologies SI4980DY-T1-E3

    Channel Type:N Channel; Drain Source Voltage Vds N Channel:80V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3.7A; Continuous Drain Current Id P Channel:-; Drain Source On State Resistance P Channel:- Rohs Compliant: Yes |Vishay SI4980DY-T1-E3
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    Newark SI4980DY-T1-E3 Cut Tape 2,500
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    Vishay Siliconix SI4980DY-T1-E3

    MOSFET, Dual, N-Channel, 80V, 3.7A, 2W, SO-8 | Siliconix / Vishay SI4980DY-T1-E3
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    RS SI4980DY-T1-E3 Bulk 2,500
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    Vishay Intertechnologies SI4980DYT1-E3

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    Bristol Electronics SI4980DYT1-E3 7,110
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    Vishay Siliconix SI4980DY-T1

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    Bristol Electronics SI4980DY-T1 895
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    Vishay Siliconix SI4980DY

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    Bristol Electronics SI4980DY 30
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    Find more SI4980DY price and stock on Findchips.com

    SI4980DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4980DY Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si4980DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4980DY Vishay Intertechnology Dual N-Channel 80-V (D-S) MOSFET Original PDF
    SI4980DY Vishay Siliconix Dual N-Channel 80-V (D-S) MOSFET Original PDF
    Si4980DY SPICE Device Model Vishay Dual N-Channel 80-V (D-S) MOSFET Original PDF
    SI4980DY-T1 Vishay Intertechnology Dual N-Channel 80-V (D-S) MOSFET Original PDF
    Si4980DY-T1 Vishay Siliconix Dual N-Channel 80-V (D-S) MOSFET Original PDF

    SI4980DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4980DY

    Abstract: Si4980DY-T1-E3
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 11-Mar-11

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original     		PDF Si4980DY Si4980DY-T1 18-Jul-08

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(ON) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4980DY S-53722--Rev. 25-Aug-97

    Si4980DY

    Abstract: Si4980DY-T1
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original     		PDF Si4980DY Si4980DY-T1 S-03950--Rev. 26-May-03

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 11-Mar-11

    Si4980DY

    Abstract: Si4980DY-T1
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)


    Original     		PDF Si4980DY Si4980DY-T1 08-Apr-05

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4980DY S-49460--Rev. 17-Dec-95

    AN609

    Abstract: Si4980DY 68117
    Text: Si4980DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4980DY AN609 12-Jun-07 68117

    Si4980DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4980DY 18-Jul-08

    Si4980DY

    Abstract: 71014
    Text: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4980DY S-51890Rev. 12-Sep-05 71014

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4980DY S-56944â 23-Nov-98

    Si4980DY

    Abstract: No abstract text available
    Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4980DY S-53722--Rev. 25-Aug-97

    Si4980DY

    Abstract: 71014
    Text: \\\ SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4980DY 0-to-10V 25-Mar-02 71014

    Si4980DY

    Abstract: Si4980DY-T1-E3
    Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 18-Jul-08

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


    Original     		PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ4980DY S e m i c o n d u c t o r s Dual N-Channel 80-V Rated MOSFET Product Summary V d s V 80 rDS(on) ( ß ) I d (A) 0.075 @ VGS = 10 V ±3.7 0.095 @ VGS = 6.0 V ±3.2 po'«0 SO-8 «J Top View N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 4980DY S-49460--Rev. 17-Dec-95