SI6433 Search Results

72511

Abstract: Si6433BDQ
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

Si6433BDQ

Contextual Info: SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6433BDQ

Contextual Info: SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6433BDQ

Abstract: 72511
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

Si6433DQ

Contextual Info: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Si6433DQ

Abstract: Si9424DY Si9433DY
Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S

72511

Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

72511

Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

72511

Abstract: Si6433BDQ Si6433BDQ-T1
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D

SI6433

Contextual Info: Temic SÌ9433DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y VDS V -20 r DS(on)(^) I d (A) 0.045 @ Vgs - “4-5 V ± 5.4 0.070 @ Vgs = -2.7 V ±4.2 Recom m ended upgrade: Si9424D Y Lower pro file ¡smaller size see: Si6433DQ S S S

S-49534

Abstract: Si6433DQ
Contextual Info: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6433BDQ

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

70530

Abstract: Si6433DQ
Contextual Info: Si6433DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 D S S G 1 2 D 8 7 Si6433DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View

S-49534

Abstract: Si6433DQ
Contextual Info: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D

72511

Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

72511

Abstract: Si6433BDQ Si6433BDQ-T1
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D

S-49534

Abstract: Si6433DQ
Contextual Info: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6433DQ

Abstract: Si9424DY Si9433DY
Contextual Info: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S

Si6433BDQ

Contextual Info: SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6433DQ

Contextual Info: Siliconix PĆChannel EnhancementĆMode MOSFET Si6433DQ Product Summary VDS V -12 rDS(on) (W) ID (A) 0.06 @ VGS = -4.5 V "4.0 0.10 @ VGS = -2.7 V "3.0 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6433DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.

70617

Abstract: AN609 Si6433BDQ
Contextual Info: Si6433BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6433BDQ

Abstract: Si6433BDQ-T1 Si6433BDQ-T1-E3 Si6433DQ Si6433DQ-T1 Si6433DQ-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si6433BDQ vs. Si6433DQ Description: P-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6433BDQ-T1 Replaces Si6433DQ-T1 Si6433BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6433DQ-T1-E3 (Lead (Pb)-free version)

Si6433BDQ

Abstract: 72511
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7