SI6465 Search Results
SI6465 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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Si6465DQ |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
Si6465DQ | Vishay Intertechnology | P-Channel 1.8-V (G-S) MOSFET | Original | 63.98KB | 4 | ||
SI6465DQ-DS | Vishay Telefunken | DS-Spice Model for Si6465DQ | Original | 210.59KB | 3 | ||
Si6465DQ SPICE Device Model |
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P-Channel 1.8-V (G-S) MOSFET | Original | 210.61KB | 3 | ||
SI6465DQ-T1 | Siliconix | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -8V, Single, Pkg Style TSOP-8 | Scan | 41.73KB | 1 | ||
SI6465DQ-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8.8A 8TSSOP | Original | 10 | |||
SI6465DQ-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8.8A 8TSSOP | Original | 10 |
SI6465 Price and Stock
Vishay Siliconix SI6465DQ-T1-E3MOSFET P-CH 8V 8.8A 8TSSOP |
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SI6465DQ-T1-E3 | Reel | 3,000 |
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Vishay Intertechnologies SI6465DQ-T1 |
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SI6465DQ-T1 | 2,991 |
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Vishay Siliconix SI6465DQT1P-CHANNEL 1.8-V (G-S) MOSFET Power Field-Effect Transistor, 8.8A I(D), 8V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI6465DQT1 | 21,000 |
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SI6465 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si6465Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6465DQ Si6465DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si6465 | |
9585
Abstract: AN609 Si6465DQ
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Si6465DQ AN609 29-Jun-07 9585 | |
Si6465DQContextual Info: SPICE Device Model Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si6465DQ 25-Feb-99 | |
Si6465DQContextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6465DQ Si6465DQ-T1-GE3 18-Jul-08 | |
Si6465DQContextual Info: SPICE Device Model Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si6465DQ 18-Jul-08 | |
Contextual Info: SI6465DQ VISHAY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.012 @ VGS = —4.5 V ±8 .8 0.017 @ VGS = —2.5 V ±7 .4 0.025 @ VGS = -1 .8 V ±6 .0 I* ' v* so TSSOP-8 D S D Si6465DQ 'Source Pins 2, 3, 6 and 7 |
OCR Scan |
SI6465DQ Si6465DQ S-56943â 02-Nov-98 | |
Contextual Info: SI6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V d s (V) -8 I Rd s io m ) (£2) I 0.012 @ VGS = -4 .5 V ±8.8 I 0.017 @ VGS = -2 .5 V ±7.4 I 0.025 @ VGs - -1.8 V ± 6 .0 I d (A) so TSSOP-8 O D [T it 'Source Pins 2, 3, 6 and 7 must be tied common |
OCR Scan |
SI6465DQ Si6465DQ S-56943-- 02-Nov | |
Si6465DQContextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7 |
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Si6465DQ S-56943--Rev. 02-Nov-98 | |
Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6465DQ Si6465DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6465DQ Si6465DQ-T1-GE3 08-Apr-05 | |
Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.012 @ VGS = –4.5 V "8.8 0.017 @ VGS = –2.5 V "7.4 0.025 @ VGS = –1.8 V "6.0 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6465DQ G *Source Pins 2, 3, 6 and 7 |
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Si6465DQ 08-Apr-05 | |
Siliconix HandbookContextual Info: MIC5159 Micrel MIC5159 Programmable Current Limit µCap LDO Regulator Controller Advance Information General Description Features Micrel’s MIC5159 is a precision voltage regulator controller. Used with an external P-Channel MOSFET, the MIC5159 forms a two-chip low dropout regulator capable of driving a |
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MIC5159 MIC5159 OT-23-6, Siliconix Handbook | |
SDCFB
Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
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SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 | |
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 | |
si5480
Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
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Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 | |
0858T
Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
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Si4467DY TN0200T TP0101T TN0200TS TP0610T TN0201T VP0610T VN0605T 2N7002 TN2460T 0858T VP0610T siliconix catalog dual j-fet MMBFJ176 |