SI6466 Search Results

Si6466ADQ

Abstract: S-00984
Contextual Info: Si6466ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6466ADQ * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

0715

Abstract: AN609 Si6466ADQ
Contextual Info: Si6466ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6466ADQ

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

Si6466ADQ

Abstract: Si6466ADQ-T1
Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7

Si6466DQ

Contextual Info: Si6466DQ N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6466DQ D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7

S-54704

Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D 1 S 2 8 D 7 S S G 3 6 S 4 5 D D Si6466DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

APPLICATION NOTE AN-6466

Contextual Info: Si6466DQ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Si6466DQ

Abstract: Si6466
Contextual Info: SPICE Device Model Si6466DQ N-Channel 2.5-V G-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si6466DQ

Abstract: Si6466DQ-T1
Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7

Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D 1 S 2 8 D 7 S S G 3 6 S 4 5 D D Si6466DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 7.8 0.021 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D 6 S 5 D * Source Pins 2, 3, 6 and 7

A2033

Contextual Info: Si6466DQ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Si6466ADQ

Abstract: Si6466ADQ-T1
Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7

Contextual Info: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

LT1517-5

Abstract: LTC1700 919AS-IR8N
Contextual Info: Final Electrical Specifications LTC1700 No RSENSE Synchronous Step-Up DC/DC Controller U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1700 is a current mode synchronous step-up DC/DC controller that drives external N-channel and P-channel power MOSFETs using a constant frequency

2C10

Abstract: LTC1700EMS DC349A SI3443DV SI6466DQ SI9803DY SI9804DY DC349
Contextual Info: A B C GND E2 100pF C8 5 220pF C7 R3 2.2K E5 C6 0.1uF RUN JP2 E6 SW TG VOUT BG PGND SYNC/MODE RUN/SS VFB ITH SGND SYNC/MODE 5 4 3 2 1 U1 LTC1700EMS Vin 6 7 8 9 10 4 4 L1 1.5uH VIN 2.5V/3.3V E1 Q2 SI9804DY 4 C1 22uF C2 68uF OPTION 3 Q3 SI9804DY 4 5 6 7 8 1

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

Siliconix

Abstract: S-54704 It83
Contextual Info: SÌ6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET Vos (VJ Ros(on) i Q) ip (A) 0.014 @ Vqs = 4.5 V ±7.8 0.021 @ Vqs = 2-5 V ±6.3 e < f> " A 20 D O TSSOP-8 • UE * Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô S' N-Channel MOSFET wtmmmm

LT1302

Abstract: 6TPB330M D104C JMK316BJ106ML LMK432BJ226MM LTC1700 LTC1700EMS TAJB686K006R linear Regulated Power Supply Schematic Diagram for constant 5V and 2A lt1517
Contextual Info: Final Electrical Specifications LTC1700 No RSENSE Synchronous Step-Up DC/DC Controller U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1700 is a current mode synchronous step-up DC/DC controller that drives external N-channel and P-channel power MOSFETs using a constant frequency