SI7121ADN Search Results
SI7121ADN Price and Stock
Vishay Siliconix SI7121ADN-T1-GE3MOSFET P-CH 30V 12A PPAK1212-8 |
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SI7121ADN-T1-GE3 | Cut Tape | 8,504 | 1 |
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SI7121ADN-T1-GE3 | 6,000 | 1 |
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Vishay Intertechnologies SI7121ADN-T1-GE3P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7121ADN-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7121ADN-T1-GE3 | Reel | 15 Weeks | 3,000 |
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SI7121ADN-T1-GE3 | 16,911 |
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SI7121ADN-T1-GE3 | Cut Tape | 2,247 | 5 |
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SI7121ADN-T1-GE3 | 2,032 |
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SI7121ADN-T1-GE3 | Reel | 9,000 | 3,000 |
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SI7121ADN-T1-GE3 | 2,996 | 1 |
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SI7121ADN-T1-GE3 | 19 Weeks | 6,000 |
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SI7121ADN-T1-GE3 | 16 Weeks | 3,000 |
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Vishay Intertechnologies SI7423DN-T1-E3MOSFETs 30V 11.7A 3.8W 18mohm @ 10V |
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SI7423DN-T1-E3 | Reel | 45,000 | 3,000 |
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SI7121ADN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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| SI7121ADN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V D-S PPAK 1212-8 | Original | 13 |
SI7121ADN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
62930Contextual Info: Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) 0.0150 at VGS = -10 V -18 e 0.0200 at VGS = -6 V -18 e 0.0260 at VGS = -4.5 V -18 • TrenchFET Power MOSFET Qg (TYP.) • Low thermal resistance PowerPAK® package |
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Si7121ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 62930 | |
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Contextual Info: Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX. ID (A) 0.0150 at VGS = -10 V -18 e 0.0200 at VGS = -6 V -18 e 0.0260 at VGS = -4.5 V -18 • TrenchFET Power MOSFET Qg (TYP.) • Low thermal resistance PowerPAK® package |
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Si7121ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si7121ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |