SI7129DN Search Results
SI7129DN Price and Stock
Vishay Siliconix SI7129DN-T1-GE3MOSFET P-CH 30V 35A PPAK1212-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7129DN-T1-GE3 | Digi-Reel | 9,239 | 1 |
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SI7129DN-T1-GE3 | Bulk | 3,000 |
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Vishay Intertechnologies SI7129DN-T1-GE3P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7129DN-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7129DN-T1-GE3 | Reel | 15 Weeks | 3,000 |
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SI7129DN-T1-GE3 | 8,740 |
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SI7129DN-T1-GE3 | 224 | 16 |
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SI7129DN-T1-GE3 | Cut Strips | 224 | 15 Weeks | 1 |
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SI7129DN-T1-GE3 | Cut Tape | 9,922 | 5 |
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SI7129DN-T1-GE3 | Reel | 15,000 | 3,000 |
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SI7129DN-T1-GE3 | 19 Weeks | 3,000 |
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SI7129DN-T1-GE3 | 16 Weeks | 3,000 |
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Vishay Huntington SI7129DN-T1-GE3MOSFET P-CH 30V 35A 1212-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7129DN-T1-GE3 | 435,760 |
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SI7129DN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI7129DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8 | Original | 13 |
SI7129DN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si7129dn
Abstract: SI7129DN-T1-GE3 Si7129
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si7129 | |
Contextual Info: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI7129DN-T1-GE3Contextual Info: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 18-Jul-08 | |
Si7129Contextual Info: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129 | |
Contextual Info: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7129
Abstract: Si7129DN Si7129DN-T1-GE3 Si7129DN-T1-GE
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129 Si7129DN-T1-GE | |
68993
Abstract: 4407 MOSFET 4407 Si7129DN 0441 CIRCUIT 4407 AN609
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Si7129DN AN609, 02-Oct-08 68993 4407 MOSFET 4407 0441 CIRCUIT 4407 AN609 | |
Si7129DN
Abstract: 64440
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Si7129DN 18-Jul-08 64440 | |
Contextual Info: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7129DN-T1-GE3
Abstract: Si7129 Si7129DN 82576 Si7129DN-T1-GE
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Si7129DN Si7129DN-T1-GE3 18-Jul-08 Si7129 82576 Si7129DN-T1-GE | |
Contextual Info: SPICE Device Model Si7129DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7129DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: LTC3863 60V Low IQ Inverting DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 3.5V to 60V Wide Negative VOUT Range: –0.4V to Beyond –150V Low Operating IQ = 70µA Strong High Voltage MOSFET Gate Driver Constant Frequency Current Mode Architecture |
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LTC3863 50kHz 850kHz 75kHz 750kHz 12-Lead DFN-10 MSOP-10E 900kHz, | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
CGA6M3X7S2A475K
Abstract: Si7129 0644A LTC3863 260N Si7129DN
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LTC3863 3863f com/3863 CGA6M3X7S2A475K Si7129 0644A 260N Si7129DN | |
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |