SI7137DP Search Results

SI7137DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI7137DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 60A PPAK 8SOIC	Original	PDF		9

SI7137DP Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Siliconix SI7137DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7137DP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.93	Buy Now
Quest Components	SI7137DP-T1-GE3		429			1 $4.00 10 $4.00 100 $4.00 1000 $1.65 10000 $1.65	Buy Now
	SI7137DP-T1-GE3		126			1 $3.00 10 $3.00 100 $1.50 1000 $1.50 10000 $1.50	Buy Now
Vishay Intertechnologies SI7137DP-T1-GE3 Power MOSFET, P Channel, 20 V, 60 A, 0.0016 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SI7137DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI7137DP-T1-GE3	Reel	9,000	12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.86	Buy Now
Mouser Electronics	SI7137DP-T1-GE3		33,307			1 $2.65 10 $1.95 100 $1.36 1000 $1.08 10000 $0.93	Buy Now
Newark	SI7137DP-T1-GE3	Bulk	29,752		1	1 $2.55 10 $1.89 100 $1.36 1000 $1.02 10000 $1.02	Buy Now
	SI7137DP-T1-GE3	Reel			3,000	1 $1.45 10 $1.45 100 $1.45 1000 $1.45 10000 $1.45	Buy Now
Quest Components	SI7137DP-T1-GE3		40			1 $3.00 10 $3.00 100 $1.65 1000 $1.65 10000 $1.65	Buy Now
TTI	SI7137DP-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.90	Buy Now

Chip 1 Exchange	SI7137DP-T1-GE3		7,753			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI7137DP-T1-GE3			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SI7137DP-T1-GE3		4,467		1	1 - 10 - 100 $4.24 1000 $4.24 10000 $3.91	Buy Now
Vyrian	SI7137DP-T1-GE3		13,104			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI7137DPT1GE3 P-CHANNEL 20-V (D-S) MOSFET Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI7137DPT1GE3		3,420			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI7137DP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
NexGen Digital	SI7137DP		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI7137DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI7137DP-T1-GE3		148,000			1 - 10 - 100 - 1000 $0.35 10000 $0.34	Buy Now

Find more SI7137DP price and stock on Findchips.com

SI7137DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 18-Jul-08	PDF
Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 11-Mar-11	PDF
SI7137DP-T1-GE3 Abstract: SI7137DP VA140 Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 18-Jul-08 VA140	PDF
Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7137DP Abstract: SI7137DP-T1-GE3 Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • • • • Qg (Typ.) d - 60 - 60d - 60d 183 nC PowerPAK SO-8	Original	Si7137DP Si7137DP-T1-GE3 18-Jul-08	PDF
Si7137DP Abstract: Si7137DP-T1-GE3 si7137 Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 11-Mar-11 si7137	PDF
transistor c 6073 Abstract: mosfet 0018 AN609 Si7137DP Contextual Info: Si7137DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si7137DP AN609, 02-Dec-08 transistor c 6073 mosfet 0018 AN609	PDF
Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7137DP Abstract: SI7137 Contextual Info: SPICE Device Model Si7137DP Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7137DP 18-Jul-08 SI7137	PDF
Contextual Info: SPICE Device Model Si7137DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7137DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7137DP Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET	Original	Si7137DP 2002/95/EC Si7137DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
ISL6259 Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01	Original		PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF

MCP79MXT-B3 Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE	Original	ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A	PDF
Si7141 Abstract: SiA447DJ SI7615A Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF
SI4497 Contextual Info: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm	Original	SC-75 VMN-PT0197-1006 SI4497	PDF

SI7137DP Search Results

SI7137DP Datasheets (1)

SI7137DP Price and Stock

Vishay Siliconix SI7137DP-T1-GE3

Vishay Intertechnologies SI7137DP-T1-GE3

Vishay Intertechnologies SI7137DPT1GE3

Vishay Huntington SI7137DP

Vishay Huntington SI7137DP-T1-GE3

SI7137DP Datasheets Context Search

SI7137DP-T1-GE3

Si7137DP

Si7137DP

transistor c 6073

Si7137DP

Si7137DP

ISL6259

FSQ510 Equivalent

MCP79MXT-B3

Si7141

si7121

Diode SOT-23 marking 15d

SI4497