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SI7686ADP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1418 Abstract: AN609 Si7686ADP Contextual Info: Si7686ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si7686ADP AN609, 26-Aug-08 1418 AN609	PDF
Si7686ADP Contextual Info: SPICE Device Model Si7686ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7686ADP 18-Jul-08	PDF

Catalog Datasheet

Type

Document Tags

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1418

Abstract: AN609 Si7686ADP
Contextual Info: Si7686ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Original

Si7686ADP AN609, 26-Aug-08 1418 AN609

PDF

Si7686ADP

Contextual Info: SPICE Device Model Si7686ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Original

Si7686ADP 18-Jul-08

PDF