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    SI7852 Search Results

    SI7852 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7852ADP-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 30A 8-SO Original PDF 9
    SI7852ADP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 30A PPAK 8SOIC Original PDF 9
    SI7852DP
    		Vishay Siliconix MOSFETs Original PDF 61.83KB 5
    Si7852DP
    		Vishay Siliconix N-Channel 80-V (D-S) MOSFET Original PDF 40.02KB 5
    Si7852DP SPICE Device Model
    		Vishay N-Channel 80-V (D-S) MOSFET Original PDF 203.29KB 3
    SI7852DP-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 7.6A PPAK 8SOIC Original PDF 8
    SI7852DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 7.6A PPAK 8SOIC Original PDF 8
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    SI7852 Price and Stock

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    Vishay Siliconix SI7852DP-T1-E3

    MOSFET N-CH 80V 7.6A PPAK SO-8
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    DigiKey () SI7852DP-T1-E3 Digi-Reel 11,910 1
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    SI7852DP-T1-E3 Cut Tape 11,910 1
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    SI7852DP-T1-E3 Reel 9,000 3,000
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    RS SI7852DP-T1-E3 Bulk 3,000
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    ES Components SI7852DP-T1-E3
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    New Advantage Corporation SI7852DP-T1-E3 6,000 1
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    Vishay Siliconix SI7852DP-T1-GE3

    MOSFET N-CH 80V 7.6A PPAK SO-8
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    DigiKey () SI7852DP-T1-GE3 Digi-Reel 4,135 1
    • 1 $2.97
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    SI7852DP-T1-GE3 Cut Tape 4,135 1
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    SI7852DP-T1-GE3 Reel 3,000 3,000
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    Chip 1 Exchange SI7852DP-T1-GE3 15,486
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    New Advantage Corporation SI7852DP-T1-GE3 27,000 1
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    Vishay Siliconix SI7852ADP-T1-E3

    MOSFET N-CH 80V 30A PPAK SO-8
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    DigiKey () SI7852ADP-T1-E3 Reel
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    Vishay Siliconix SI7852ADP-T1-GE3

    MOSFET N-CH 80V 30A PPAK SO-8
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    DigiKey () SI7852ADP-T1-GE3 Digi-Reel
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    Vishay Intertechnologies SI7852DP-T1-E3

    N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SI7852DP-T1-E3)
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    Avnet Americas SI7852DP-T1-E3 Reel 3,000 13 Weeks 3,000
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    Mouser Electronics SI7852DP-T1-E3 10,468
    • 1 $2.38
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    • 100 $1.73
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    Newark () SI7852DP-T1-E3 Cut Tape 5,995 5
    • 1 $2.91
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    • 100 $2.16
    • 1000 $1.92
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    SI7852DP-T1-E3 Reel 3,000
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    SI7852DP-T1-E3 Reel 3,000
    • 1 $1.49
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    Bristol Electronics SI7852DP-T1-E3 34
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    Quest Components SI7852DP-T1-E3 4
    • 1 $2.45
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    TTI SI7852DP-T1-E3 Reel 3,000
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    Avnet Asia SI7852DP-T1-E3 15 Weeks 3,000
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    EBV Elektronik SI7852DP-T1-E3 14 Weeks 3,000
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    Vyrian SI7852DP-T1-E3 7,603
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    SI7852 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si7852DP

    Abstract: Si7852DP-T1-E3
    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 11-Mar-11 PDF

    Si7852DP

    Contextual Info: Si7852DP New Product Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 12.5 0.022 @ VGS = 6 V 10.9 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		Si7852DP 07-mm S-03829--Rev. 28-May-01 PDF

    40535

    Abstract: AN609 Si7852ADP 30667
    Contextual Info: Si7852ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7852ADP AN609 22-Oct-07 40535 30667 PDF

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7852DP

    Contextual Info: SPICE Device Model Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7852DP S-60245Rev. 20-Feb-06 PDF

    SI7852DP

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 12.5 0.022 @ VGS = 6 V 10.9 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		Si7852DP 07-mm Si7852DP-T1 08-Apr-05 PDF

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7852ADP Si7852ADP-T1-E3 Si7852ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7852ADP Si7852ADP-T1-E3 Si7852ADP-T1-GE3 11-Mar-11 PDF

    SI7852ADP-T1-E3

    Abstract: SI7852ADP SI7852DP Si7852DP-T1-E3 si7852 SI7852DP-T1
    Contextual Info: Specification Comparison Vishay Siliconix Si7852ADP vs. Si7852DP Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7852ADP-T1-E3 replaces Si7852DP-T1-E3 Si7852ADP-T1-E3 replaces Si7852DP-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si7852ADP Si7852DP Si7852ADP-T1-E3 Si7852DP-T1-E3 Si7852DP-T1 06-Feb-08 si7852 PDF

    Si7852DP SPICE Device Model

    Abstract: Si7852DP
    Contextual Info: SPICE Device Model Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7852DP 18-Jul-08 Si7852DP SPICE Device Model PDF

    SI7852DP

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 12.5 0.022 @ VGS = 6 V 10.9 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		Si7852DP 07-mm Si7852DP-T1 S-31727--Rev. 18-Aug-03 PDF

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI7852ADP-T1-E3

    Abstract: SI7852ADP
    Contextual Info: New Product Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS


    Original     		Si7852ADP Si7852ADP-T1-E3 18-Jul-08 PDF

    S7267

    Abstract: SI7852ADP-T1-E3 si7852adp
    Contextual Info: New Product Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ) 50 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS


    Original     		Si7852ADP Si7852ADP-T1-E3 08-Apr-05 S7267 PDF

    SI7852DP

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile


    Original     		Si7852DP Si7852DP-T1 Si7852DP-T1-E3 18-Jul-08 PDF

    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®


    Original     		Si7852DP Si7852DP-T1-E3 Si7852DP-T1-GE3 11-Mar-11 PDF

    SI7852DP-T1

    Abstract: Si7852DP
    Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 12.5 0.022 @ VGS = 6 V 10.9 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		Si7852DP 07-mm Si7852DP-T1 S-31727--Rev. 18-Aug-03 PDF

    si7852adp

    Contextual Info: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7852ADP Si7852ADP-T1-E3 Si7852ADP-T1-GE3 18-Jul-08 PDF

    si7852adp

    Abstract: S-80736
    Contextual Info: SPICE Device Model Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7852ADP 18-Jul-08 S-80736 PDF

    SI7852ADP-T1-E3

    Contextual Info: New Product Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS


    Original     		Si7852ADP Si7852ADP-T1-E3 08-Apr-05 PDF

    Contextual Info: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7852ADP Si7852ADP-T1-E3 Si7852ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model Si7852DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si7852DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF