SI7858BDP Search Results
SI7858BDP Price and Stock
Vishay Siliconix SI7858BDP-T1-GE3MOSFET N-CH 12V 40A PPAK SO-8 |
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SI7858BDP-T1-GE3 | Digi-Reel | 664 | 1 |
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SI7858BDP-T1-GE3 | 3,000 | 1 |
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Vishay Intertechnologies SI7858BDP-T1-GE3N-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI7858BDP-T1-GE3) |
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SI7858BDP-T1-GE3 | Reel | 19 Weeks | 3,000 |
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SI7858BDP-T1-GE3 |
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SI7858BDP-T1-GE3 | 1,129 | 10 |
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SI7858BDP-T1-GE3 | Cut Strips | 1,129 | 19 Weeks | 1 |
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SI7858BDP-T1-GE3 | Cut Tape | 532 | 1 |
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SI7858BDP-T1-GE3 | 127 |
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SI7858BDP-T1-GE3 | Reel | 3,000 | 3,000 |
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SI7858BDP-T1-GE3 | 24 Weeks | 3,000 |
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SI7858BDP-T1-GE3 | 20 Weeks | 3,000 |
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SI7858BDP-T1-GE3 | 4,681 |
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Vishay BLH SI7858BDP-T1-GE3 |
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SI7858BDP-T1-GE3 | 159 | 3 |
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Vishay Intertechnologies SI7858ADP-T1-E3MOSFETs 12V 29A 0.0026Ohm |
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SI7858ADP-T1-E3 | Reel | 3,000 | 3,000 |
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SI7858BDP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI7858BDP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 40A 8SOIC | Original | 9 |
SI7858BDP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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40869Contextual Info: Si7858BDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si7858BDP AN609, 0905m 9094m 5688m 1321m 4455m 9815m 9002m 40869 | |
Si7858ADP
Abstract: Si7858BDP Si7858ADP-T1 Si7858ADP-T1-GE3 n-Channel 12-V D-S MOSFET SI7858BDP-T1-GE3
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Si7858BDP Si7858ADP Si7858BDP-T1-GE3 Si7858ADP-T1-GE3 29-Apr-10 Si7858ADP-T1 n-Channel 12-V D-S MOSFET | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7858BDP
Abstract: SI7858BDP-T1-GE3
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 18-Jul-08 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7858BDPContextual Info: SPICE Device Model Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7858BDP 18-Jul-08 | |
Contextual Info: SPICE Device Model Si7858BDP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7858BDP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 11-Mar-11 | |
AC Transformer 50A 100V inductanceContextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n Wide VIN Range: 1.6V to 42V Positive or Negative Output Voltage Programming with a Single Feedback Pin PGOOD Output Voltage Status Report Accurate 50mV SENSE Threshold Voltage |
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LT3759 100kHz DFN-10 MSOP-10E AC Transformer 50A 100V inductance | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Contextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES Wide VIN Range: 1.6V to 42V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n PGOOD Output Voltage Status Report n Accurate 50mV SENSE Threshold Voltage |
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100kHz LT3759 DFN-10 MSOP-10E | |
si414
Abstract: lt3759 Si414DJ
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LT3759 100kHz DFN-10 MSOP-10E LT3957 LT3958 LTC3872 TSOT-23 si414 lt3759 Si414DJ | |
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Contextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n Wide VIN Range: 1.6V to 42V Positive or Negative Output Voltage Programming with a Single Feedback Pin PGOOD Output Voltage Status Report Accurate 50mV SENSE Threshold Voltage |
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LT3759 100kHz OP-10E LT3957 LT3958 LTC3872 TSOT-23 3759fb |