SI8800 Search Results
SI8800 Price and Stock
Vishay Siliconix SI8800EDB-T2-E1MOSFET N-CH 20V 4MICROFOOT |
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SI8800EDB-T2-E1 | Cut Tape | 9,975 | 1 |
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SI8800EDB-T2-E1 | 6,000 | 1 |
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Vishay Intertechnologies SI8800EDB-T2-E1N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8800EDB-T2-E1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8800EDB-T2-E1 | Reel | 36,000 | 14 Weeks | 3,000 |
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SI8800EDB-T2-E1 | 24,000 |
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SI8800EDB-T2-E1 | Reel | 36,000 | 3,000 |
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SI8800EDB-T2-E1 | Reel | 3,000 | 3,000 |
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SI8800EDB-T2-E1 | Reel | 6,000 | 3,000 |
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SI8800EDB-T2-E1 | 12 Weeks | 3,000 |
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SI8800EDB-T2-E1 | 15 Weeks | 3,000 |
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SI8800EDB-T2-E1 | 11,071 |
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Vishay Huntington SI8800EDB-T2-E1Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R / MOSFET N-CH 20V MICROFOOT |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8800EDB-T2-E1 | 6,000 |
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SI8800 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI8800EDB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT | Original | 8 | ||||
SI-8800L |
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Separate Excitation Switching Type with Transformer | Original | 79.89KB | 5 |
SI8800 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si88Contextual Info: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si8800EDB AN609, 19-May-10 si88 | |
Contextual Info: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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Si8800EDB 2002/95/EC 18-Jul-08 | |
Contextual Info: Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT 0.8 x 0.8 S 3 xxx |
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Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET |
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Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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Si8800EDB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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Si8800EDB 2002/95/EC 11-Mar-11 | |
si8800
Abstract: Si8800E
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Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8800 Si8800E | |
Contextual Info: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET |
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Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Guide to Sanken IC Regulators 1. Dropper Type Type VO V Series IO(A) name 3 3.3 5 9 12 15 15.7 24 Variable output voltage Functions (3 to 24) SurfaceA8180SLU 0.15 A8183SLU A8186SLU Thermal protection, Output ON/OFF control A8180SLT 0.15 A8184SLT A8187SLT |
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SurfaceA8180SLU A8183SLU A8186SLU A8180SLT A8184SLT A8187SLT A8180SLB SI-3000B SI-3000F SI-3000C | |
3003nContextual Info: Contents Selection Guide . 2 Product Index by Part Number . 4 Ordering . 6 |
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SI-3000N SI-3003N SI-3001N SI-8800L/8900L STA801M/802M SDI02 SLA3001M/3002M/3004M SLA3005M/3006M/3007M 3003n | |
SI-8400L
Abstract: 3006M
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A8180SLU/SLT A8180SLB SI-3000N SI-8400L/8500L SI-8800L/8900L STA801M/802M SLA3001M/3002M/3004M SLA3005M/3006M SI-8400L 3006M | |
Capacitors Nippon Chemi-Con SME type
Abstract: Nippon sxe NIPPON CHEMI-CON 100uF 25V SLA3000M NIPPON CAPACITORS Nippon Chemi-Con SME Nippon Chemi-Con sxe capacitor Nippon capacitors 470uf NIPPON CHEMI-CON capacitors SI-8911L
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qSI-8800L/8900L SI-8800L/8900L SI-8811L, SI-8911L) SI-8811L SI-8911L SI-8921L/8922L Capacitors Nippon Chemi-Con SME type Nippon sxe NIPPON CHEMI-CON 100uF 25V SLA3000M NIPPON CAPACITORS Nippon Chemi-Con SME Nippon Chemi-Con sxe capacitor Nippon capacitors 470uf NIPPON CHEMI-CON capacitors SI-8911L | |
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sk 8050s
Abstract: sk a 3120c sk 3240c td 3001N IC SI-8050S 5V 3A SI-3522V SI-3120C 3132V 3522V SI-3132V
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sk a 3120c
Abstract: 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A
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responsib82-2-714-3700 H1-I01EC0-9909040ND sk a 3120c 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A | |
IC SI-8050S 5V 3A
Abstract: sk 3090c sk 8050S sk a 3120c A8180 SI-3242P toroidal transformer 22v td 3001N 3522V 3922v
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IC SI-8050S 5V 3A
Abstract: sk 8050s sk a 3120c STR2012 sk 3240c sk a 3240c sk a 3050c SI-3522V SI-3132V 3522V
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Contextual Info: Switching Type - Application Note •Heat Radiation and Reliability ■Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink, |
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SFPM-62 SI-8000E SI-8200L AM01Z SI-8400L SI-8000S RBV-402 SI-8300L RM10Z F200V, | |
A8180
Abstract: SLA3000M
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A8180 SI-3000N SI-3001N SI-3002N SI-3000B SI-3000F SI-3000C SI-3000J SI-3000R SI-3000P A8180 SLA3000M | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Nippon Chemi-Con SME
Abstract: Nippon Chemi-Con sxe capacitor Nippon Chemi-Con sxe Nippon sxe Capacitors Nippon Chemi-Con SME type sxe capacitor SME Series NIPPON 100uf 35V sxe Nippon Chemi-Con 470uF 35v Nippon Chemi-Con
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qSI-8800L/8900L SI-8800L/8900L SI-8811L, SI-8911L) SI-8811L SI-8911L SI-8921L/8922L 100mA Nippon Chemi-Con SME Nippon Chemi-Con sxe capacitor Nippon Chemi-Con sxe Nippon sxe Capacitors Nippon Chemi-Con SME type sxe capacitor SME Series NIPPON 100uf 35V sxe Nippon Chemi-Con 470uF 35v Nippon Chemi-Con | |
Nippon sxe
Abstract: Capacitors Nippon Chemi-Con SME type NIPPON CAPACITORS Nippon Chemi-Con sxe capacitor Nippon Chemi-Con SME SI-1125HD equivalent chemicon sme
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GSI-8800L/8900L SI-8800L/8900L SI-8811L, SI-8911L) SI-8811L SI-8911L SI-8921L/8922L 100mA SI-8922L Nippon sxe Capacitors Nippon Chemi-Con SME type NIPPON CAPACITORS Nippon Chemi-Con sxe capacitor Nippon Chemi-Con SME SI-1125HD equivalent chemicon sme | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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Si8489EDB Si8902AEDB VMN-PT0107-1402 |