SI9407 Search Results
SI9407 Datasheets (12)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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Si9407AEY |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
SI9407AEY |
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FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8 | Original | 92.91KB | 5 | ||
Si9407AEY | Vishay Intertechnology | P-Channel 60-V (D-S), 175°C MOSFET | Original | 69.73KB | 4 | ||
SI9407AEY | Vishay Siliconix | P-Channel 60-V (D-S), 175°C MOSFET | Original | 71.01KB | 4 | ||
SI9407AEY | Vishay Telefunken | P-Channel 60-V (D-S), 175°C MOSFET | Original | 54.67KB | 4 | ||
SI9407AEY | Siliconix | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8 | Scan | 41.73KB | 1 | ||
SI9407AEY-DS | Vishay Telefunken | DS-Spice Model for Si9407AEY | Original | 205.15KB | 3 | ||
Si9407AEY SPICE Device Model |
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P-Channel 50-V (D-S) MOSFET | Original | 205.16KB | 3 | ||
SI9407AEY-T1 | Vishay Intertechnology | P-Channel 60-V (D-S), 175°C MOSFET | Original | 69.73KB | 4 | ||
SI9407BDY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC | Original | 10 | |||
SI9407BDY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC | Original | 10 | |||
Si9407DY |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 |
SI9407 Price and Stock
Vishay Siliconix SI9407BDY-T1-E3MOSFET P-CH 60V 4.7A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9407BDY-T1-E3 | Cut Tape | 18,316 | 1 |
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SI9407BDY-T1-E3 | Bulk | 2,500 |
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SI9407BDY-T1-E3 | 5,000 | 1 |
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Vishay Siliconix SI9407BDY-T1-GE3MOSFET P-CH 60V 4.7A 8SO |
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SI9407BDY-T1-GE3 | Reel | 10,000 | 2,500 |
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SI9407BDY-T1-GE3 | Bulk | 1 |
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SI9407BDY-T1-GE3 | 6 |
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Vishay Intertechnologies SI9407BDY-T1-GE3P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9407BDY-T1-GE3 | Reel | 17,500 | 8 Weeks | 2,500 |
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SI9407BDY-T1-GE3 | 8,558 |
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SI9407BDY-T1-GE3 | 7,500 | 2,500 |
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SI9407BDY-T1-GE3 | 7,500 | 8 Weeks | 2,500 |
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SI9407BDY-T1-GE3 | Cut Tape | 25,029 | 1 |
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SI9407BDY-T1-GE3 | 4,658 |
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SI9407BDY-T1-GE3 | 1,442 |
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SI9407BDY-T1-GE3 | Reel | 35,000 | 2,500 |
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SI9407BDY-T1-GE3 | 3,655 | 1 |
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SI9407BDY-T1-GE3 | 354,549 |
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SI9407BDY-T1-GE3 | 10 Weeks | 2,500 |
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SI9407BDY-T1-GE3 | 2,272 |
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SI9407BDY-T1-GE3 | 7,500 | 9 Weeks | 2,500 |
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SI9407BDY-T1-GE3 | 5,000 | 1 |
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SI9407BDY-T1-GE3 | 20,529 |
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SI9407BDY-T1-GE3 | 272,500 | 1 |
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Vishay Intertechnologies SI9407BDY-T1-E3P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-E3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9407BDY-T1-E3 | Reel | 2,500 | 40 Weeks | 2,500 |
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SI9407BDY-T1-E3 | 75,163 |
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SI9407BDY-T1-E3 | 5,000 | 2,500 |
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SI9407BDY-T1-E3 | 5,000 | 40 Weeks | 2,500 |
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SI9407BDY-T1-E3 | Reel | 2,500 |
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SI9407BDY-T1-E3 | Reel | 5,000 | 2,500 |
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SI9407BDY-T1-E3 | 1 |
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SI9407BDY-T1-E3 | 345 |
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SI9407BDY-T1-E3 | 42 Weeks | 2,500 |
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SI9407BDY-T1-E3 | 2,493 |
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SI9407BDY-T1-E3 | 41 Weeks | 2,500 |
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SI9407BDY-T1-E3 | 2,500 |
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Vishay Intertechnologies SI9407BDY-T1-GE3.Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No |Vishay SI9407BDY-T1-GE3. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9407BDY-T1-GE3. | Reel | 2,500 |
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Buy Now |
SI9407 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si9407AEYContextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si9407BDY-T1-GE3
Abstract: Si9407BDY Si9407BDY-T1-E3
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11 | |
C 6090
Abstract: AN609 Si9407AEY
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Si9407AEY AN609 17-Jan-06 C 6090 | |
Si9407AEY
Abstract: Si9407AEY SPICE Device Model
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Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model | |
Si9407AEYContextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available |
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Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05 | |
Si9407DYContextual Info: Si9407DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -60 rDS(on) (W) ID (A) 0.150 @ VGS = -10 V "3.0 0.240 @ VGS = -4.5 V "2.4 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si9407DY Current20 P-38889--Rev. | |
Si9407DYContextual Info: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si9407DY S-47958--Rev. 15-Apr-96 | |
Si9407AEYContextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
27k ohm resistor
Abstract: 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 Si9407AEY 27k capacitor capacitor 1uF 15V data sheet of resistor 33k
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MAX1846 300kHz) Si9407AEY 15Ohm 150uH DO5022P 25Ohm 1846-15c 55mVpp 27k ohm resistor 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 27k capacitor capacitor 1uF 15V data sheet of resistor 33k | |
Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si9407BDY www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si9407BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si9407DYContextual Info: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si9407DY S-47958--Rev. 15-Apr-96 | |
Si9407AEY
Abstract: DSA0016549
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Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549 | |
Si9407AEY
Abstract: 99445
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Si9407AEY S-99445--Rev. 29-Nov-99 99445 | |
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Si9407BDY-T1-E3
Abstract: Si9407BDY si9407 80185
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Si9407BDY Si9407BDY-T1-E3 08-Apr-05 si9407 80185 | |
SI9407BDY-T1-GE3Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si9407AEY
Abstract: 150CA
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Si9407AEY Si9407AEY--T1 Si9407AEY--E3 150CA | |
Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)a rDS(on) (Ω) 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 8 nC APPLICATIONS |
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Si9407BDY Si9407BDY-T1-E3 18-Jul-08 | |
Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11 | |
Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si9407AEYContextual Info: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si9407AEY 18-Jul-08 | |
Si9407BDY
Abstract: SI9407BDY-T1-GE3 Si9407BDY-T1-E3
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Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 18-Jul-08 | |
Si9407AEY-T1-E3
Abstract: Si9407AEY-T1-GE3 Si9407AEY
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Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 18-Jul-08 | |
Si9407AEY-T1-E3
Abstract: Si9407AEY Si9407AEY-T1-GE3
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Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11 |