SIA437DJ Search Results

Contextual Info: SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) (Max.) ID (A) a 0.0145 at VGS = -4.5 V -29.7 0.0205 at VGS = -2.5 V -25 0.0330 at VGS = -1.8 V -19.7 0.0650 at VGS = -1.5 V -4 Qg (Typ.)

bux diode

Abstract: SIA437DJ diode marking code BUX marking code vishay SILICONIX
Contextual Info: New Product SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0145 at VGS = - 4.5 V - 29.7 0.0205 at VGS = - 2.5 V - 25 0.0330 at VGS = - 1.8 V - 19.7 0.0650 at VGS = - 1.5 V

Contextual Info: SPICE Device Model SiA437DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,