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    SIA459EDJ Search Results

    SIA459EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA459EDJ-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 9A SC70 Original PDF 9
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    SIA459EDJ Price and Stock

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    Vishay Intertechnologies SIA459EDJ-T1-GE3

    MOSFET P-CH 20V 9A PPAK SC70-6
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    DigiKey () SIA459EDJ-T1-GE3 Cut Tape 12,393 1
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    SIA459EDJ-T1-GE3 Digi-Reel 12,393 1
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    SIA459EDJ-T1-GE3 Tape & Reel 12,000 3,000
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    Avnet Americas SIA459EDJ-T1-GE3 Tape & Reel 20 Weeks 6,000
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    Mouser Electronics SIA459EDJ-T1-GE3 120,860
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    Newark SIA459EDJ-T1-GE3 Bulk 54,910 5
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    Bristol Electronics SIA459EDJ-T1-GE3 865
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    TTI SIA459EDJ-T1-GE3 Reel 6,000
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    EBV Elektronik SIA459EDJ-T1-GE3 21 Weeks 3,000
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    Vishay Siliconix SIA459EDJ-T1-GE3

    SIA459EDJ-T1-GE3 by SILICONIX (VISHAY) is a N-channel MOSFET with 40V Vds, 10A Id, 4.5mOhm Rds(on), and 2.5V Vgs(th), ideal for power management applications.
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    IBS Electronics SIA459EDJ-T1-GE3 1
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    SIA459EDJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    SiA459EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0350 at VGS = - 4.5 V -9 - 20 0.0395 at VGS = - 3.7 V -9 0.0620 at VGS = - 2.5 V -9 Qg (Typ.) 10 nC PowerPAK SC-70-6L-Single


    Original
    SiA459EDJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF