SIEMENS FET TO92 Search Results

bf544

Abstract: siemens fet to92 700M
Contextual Info: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs RdS ON (max) I d(ON) (min) 60V 5£2 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

2n7000

Abstract: siemens fet to92 fet to92
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VN0109N5

Abstract: VN0109N VN0109N2 VN0104N3 VN0106N7 VN0109 FAST DMOS FET Switches
Contextual Info: Super t e x inc VN0104 VN0106 VN0109 • N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information JÎ BV0SS/ ^DS ON BV qgs (max) Order Number / Package TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Diet — — VN0104N3 — VN0104N6 — VN0104ND

VN0109n5

Abstract: VN0106N9 VN0106N5 VN0106N6 VN0109N2 VN0104N6 FAST DMOS FET Switches
Contextual Info: ^Supertex inc. VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss / b v dgs ^DS ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 40V 3Î2 2.0A VN0104N2 VN0104N9

VN0106N5

Abstract: VN01A VN0109N5 siemens 3FT VN0104N2 Vn0104N5 VN0106N9 VN0106N2 FAST DMOS FET Switches VN0106N
Contextual Info: VN01A tìì Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Standard Commercial Devices BVDSS/ ^ D S O N l[>(ON) BVqqs (max) (min) Order Number / Package TO-39 TO-52 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE’ VN0104N2 VN0104N9

MAC202

Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
Contextual Info: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3

D 92 M 03 DIODE

Abstract: 2n7000 4W-25 fet 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VN0104N2

Abstract: VN0106N5 VN0109 VN0106N9 VN0109N vn0109n5 VN0104/VN0106A/N0109
Contextual Info: VN0104 VN0106 VN0109 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs R d S ON Order Number / Package I d (ON) (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die' 40V 3Q 2.0A VN0104N2 VN0104N9 VN0104N3

2N7000

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

P-Channel FET 100v to92

Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TN0606

Abstract: marking TN
Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

VN0109n5

Abstract: vn0109n2 VN0109N9 VN0106N3 VN0106N6 VN0109 VN0109N3 VN0104 VN0104N3 VN0104N6
Contextual Info: VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die† 40V 3.0Ω 2.0A — — VN0104N3 — VN0104N6 —

VN0109

Abstract: vn0109n5 VN0106 vn0109n2 VN0109N9 VN0104ND VN0104N6 VN0104 VN0104N3 VN0106N3
Contextual Info: VN0109 E – T E L O S B –O VN0104 VN0106 VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) BVDGS (max) (min) TO-39 TO-52 TO-92 TO-220 Quad P-DIP* Quad C-DIP* Die† 40V 3.0Ω 2.0A —

vn0106

Abstract: VN0104 VN0104N3 VN0106N3
Contextual Info: VN0104 VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 40V 3.0Ω 2.0A VN0104N3 60V 3.0Ω 2.0A VN0106N3 TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This