SIEMENS GAAS Search Results

siemens px 100

Contextual Info: SIEMENS AKTIENGESEL LSC HAF SIEMENS •47E J> m fl235b05 D0Ebfi7& M * S I E 6 RB-42B Mask-Diffused GaAsP LED PART NO. 2680-0016 - T-Hh 97 A R Coating P-raetal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION

Contextual Info: SIEMENS CMPNTSi OPTO MME D Ô£3b35b QQOMbTb G B S I E X SIEMENS RM-81B Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0056 - T - y/- 99 P-metal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS

led bar siemens

Abstract: SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY selenium diode silicon carbide LED silicon carbide US Lasers Siemens Components
Contextual Info: SIEMENS Innovators in Optical Information Technology Company Overview Siemens Components is a major producer in the sem iconductor industry, with facilities virtually world wide. The Optical Information Technology Group OIT is headquartered in Regensburg.

RM-73A

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D SIEM ENS • flSBSbOS OOSbflfll 4 « S I E G "Fit-W. rm-73A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0003 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-73A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

RM14A

Contextual Info: • 8S3b32h OQOMtll 1 M S I E X FV/-Ÿ? SIEMENS RM-14A Mask-Diffused GaAsP Monolithic LED with Cursor PART NO. 2680-0117 P-metal anode Diffusion Barrier Epitaxial Layer > Substrate . N-metal (cathode) B SSSE DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-14A is a mask-diffused GaAsP

24 GHz Microwave Doppler Radar Speed Sensor

Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
Contextual Info: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded

Contextual Info: SIEMENS AKTIENGESELLS CHA F 47E » SIEM EN S • SSBSbDS DQ2bßöl 4 « S I E G W ? . RM-73A Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0003 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-73A is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and

808nm 1W laser diode

Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Contextual Info: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical

SMD TRANSISTOR MARKING 76

Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Contextual Info: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.

Contextual Info: SIEMENS CMPNTS-, OPTO M4E D • fia3b32b 0004 ^2 3 m s i Z X T-Y/-99 S IE M E N S RM-15B Mask-Diffused GaAsP Monolithic LED PART NO. 2680-0008 DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RM-15B is a mask-diffused GaAsP monolithic light-emitting diode. With a bright and

CFY19-22

Abstract: CFY19 Dual-Gate* bf981 bf987
Contextual Info: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '

siemens SFH nm

Abstract: sfh418 SFH414
Contextual Info: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>

Contextual Info: bGE D • ö23SbD5 OQMbbtn 112 « S I E G T ^/-// SIEMENS SFH414 SFH415 SFH416 SIEMENS AKT IENGESELLSCHAF GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH 414/415 S u rface n o l flat 2 1 7 (5 5 ) .0 2O1 (5 1) 10 189(4 8) 024 (0 6 ) ! I 016 (0 4;

Contextual Info: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )

MSC 5010

Abstract: Microwave Semiconductors MIL883 leak
Contextual Info: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

sfh615

Abstract: Siemens sfh615 optocoupler siemens 611 B235 transistor S56 optocoupler LP 250
Contextual Info: SIEMENS AKTIEN6ESELLSCHÂF 47E D • fl235bGS □□272^0 ë ■ SIEG SIEMENS SFH 610 SFH 611 SFH 615 2.8 kV TRIOS OPTOCOUPLERS HIGH RELIABILITY FEATURES * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical >13

Contextual Info: bOE 1 • S23SbQS 004b51b 734 » S I E G SIEMENS LD 261 ARRAYS LD 262—269/260 SINGLE DIODE SIEMENS AKTIENGESELLSCHAF INFRARED EMITTER DIODES Package Dimensions in Inches mm 106 (2 7) 098 (2 5 ) 1 * » 138(3 5 ) 118(3 0 ) _ L Maximum Ratings

diode b27

Abstract: N40 DIODE
Contextual Info: bOE ]> • fl235b05 004^541 b27 ISIEG SIEMENS AKTIENGESEL LSC HAF SIEMENS SFH 2115 FEATURES Characteristics T A= 2 5 °C • B Diodes Connected in Series • T 0 18 Package Parameter • Floating O utput Signal • FC Connector fo r use w ith 200 jim Fiber, NA=0.37

PMB4220

Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Contextual Info: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0

H A 431

Contextual Info: SIEMENS AKT IENGESELLSCHAF M7E D flEBSbDS Ü0B73Ô1 0 « S I E 6 SIEMENS SFH 431 SERIES INFRARED EMITTER t - FEATURES Absolute Maximum Ratings • • • • Parameter TO-18 Hermetic Package, 3-Leaded Dome Glass Lens Very Narrow Beam, ± 8 ° Three High Power Intensity Ranges

1L31

Abstract: 1LD5
Contextual Info: SIEMENS C M P N T S t OPTO SIEMENS Û23b35b OÜOSOQ1 T B S I E X 44E D IL30/IL31/IL55 SINGLE CHANNEL ILD30/ILD31/ILD55 DUAL CHANNEL ILQ30/ILQ31/ILQ55 QUAD CHANNEL PHOTODARLINGTON OPTOCOUPLER FEATURES • 125 mA Load Current Rating • Fast Rise Tim e—10 ns

SFH400

Contextual Info: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)