SIEMENS IGBT 75A Search Results

siemens rectifier pwm igbt

Abstract: single phase igbt based inverter 200 amps circuit 0.5 hp 3-PHASE induction motor single phase ac voltage controller with igbts make three phase inverter powersystems siemens igbt inverters design sine wave power inverter single phase input basic electronic components rectifier, inverter ECONOPACK
Contextual Info: Powersystems World `96 Conference, PCIM, September 7-13,1996, Las Vegas. A new compact inverter concept with low profile solderable ECONOPACK modules by M. Feldvoß 1 , G. Miller (1), Jeff Reichard (2) (1) Siemens AG, Semiconductor Group, Balanstr. 73, D-81617 Munich, Germany

BSM20GP60

Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
Contextual Info: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers

IGBT motor DRIVER SCHEMATIC hcpl

Abstract: siemens sinamics igbt chip siemens igbt inverters 5kw inverter schematic IGBT Power Module siemens ag advantage and disadvantage of igbt IGBT DRIVER SCHEMATIC 3 PHASE SCHEMATIC 5kw power supply 30A FS75R12KE3_B3 SINAMICS S120
Contextual Info: Current Shunt Resistors integrated in IGBT Power Modules for Medium Power Drive Application M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49- 0 2902-764-1159 Current sensors are required to measure an electric current in an output phase of an

2ed020i12

Abstract: SIEMENS THYRISTOR SCR 2146 fast thyristor 200A bridge rectifier gate control UPS SIEMENS 15 kva iran 2ED300C17 UPS design B133-H9107-G1-X-7600 SMPS INVERTER FULL BRIDGE FOR WELDING
Contextual Info: High Power Semiconductors for Industrial Applications Best-in-class products to meet your application demands w w w. i n f i n e o n . c o m / p o w e r s e m i c o n d u c t o r s EasyPIM , EasyPACK EconoPIM™, EconoPACK™ The easy way with compact modules

ixgh40n60c2d1

Abstract: IXGT40N60C2D1 PDF IXYS IXGH40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2 a200g
Contextual Info: IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1 HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT ≤ tfi(typ) = 600V 75A 2.7V 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

375A1

Abstract: IXXH75N60C3
Contextual Info: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60B3D1

Abstract: IXXH75N60B3
Contextual Info: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60B3D1

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75n60

Contextual Info: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

150-A54

Contextual Info: IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

3rd Generation of 1200V IGBT Modules

Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Contextual Info: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings

Contextual Info: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES

Coreless pcb transformer

Abstract: sinamics s120 igbt transformer driver igbt 1000v 30a driver igbt SIEMENS IGBT 788J IGBT 1000V 100A 2ed020i12 FS75R12KE3_B3
Contextual Info: 为中功率驱动应用内置电流取样电阻的 IGBT 功率模块 M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49- 0 2902-764-1159 测量 IGBT 逆变器的输出相电流需用电流传感器。按 IGBT 逆变器输出功率的不同，目

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

150-A54

Contextual Info: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXXH75N60C3D1

Abstract: 75N60C3
Contextual Info: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60

Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

75N60B3

Abstract: IXXH75N60B3D1 75n60
Contextual Info: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N250

Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16
Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES

60N60C2

Abstract: ixgh60n60c2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20

Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

IXGQ150N33TC

Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Contextual Info: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30

IXXR110N60B4H1

Contextual Info: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings