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    SIEMENS PHOTODIODE BPW34S Search Results

    SIEMENS PHOTODIODE BPW34S Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    OPT101P-JG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT301M
    Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-J
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    SIEMENS PHOTODIODE BPW34S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode 2.65 mm x 2.65 mm BPW 34 S GE006863 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm


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    GE006863 BPW34S PDF

    BPW34S

    Abstract: Anders Electronics Siemens photodiode BPW34s
    Contextual Info: SIEMENS Silizium-PIN-Fotodiode Reverse Gullwing Silicon PIN Photodiode (Reverse Gullwing) 2.65 mm x 2.65 mm BPW 34 S (E9087) G E006916 CL CD Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im


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    E9087) E006916 E9087: BPW34S BPW34S Anders Electronics Siemens photodiode BPW34s PDF

    BPW34S

    Contextual Info: SIEMENS Silizium-PIN-Fotodiode Reverse Gullwing Silicon PIN Photodiode (Reverse Gullwing) BPW 34 S (E9087) Chip position o 00 I O Í ff ö. f 37 6.7 6.2 2.65 mm x 2.65 mm (0 s5 CL m GE006916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


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    E9087) GE006916 E9087: BPW34S BPW34S PDF

    bpw 104

    Abstract: a850
    Contextual Info: BPW 34S E9087 SIEMENS FEATURES • Especially suitable tor applicatons from 400 nm toitOOnm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Reverse guilwing Characteristics Ta =25°C, standard light A, T=2856k


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    E9087) 2856k BPW34S( bpw 104 a850 PDF