SIEMENS PRODUCTS TRANSISTOR Search Results

Siemens Multibank DRAM

Contextual Info: SIEMENS 1 DRM256 Introduction Modular embedded DRAM is the core of a new service provided by the SIEMENS Memory Products group. Custom logic can be combined with the latest SIEMENS dynamic memory technology providing application specific embedded DRAM solutions manufactured by SIEMENS . Modular

siemens s7-300 battery replacement

Abstract: siemens 300 Modular PLC features service manual SITOP siemens sitop power 20 electrical diagram siemens sitop power 40 siemens sitop power 10 6EP1931-2FC01 Maintenance Manual siemens sitop 6EP1437-3BA00 circuit diagram
Contextual Info: Siemens AG 2013 SITOP Power Supply SITOP Catalog KT 10.1 Edition 2014 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Controls SIRIUS IC 10 E86060-K1010-A101-A2-7600 SIMATIC Products for Totally Integrated Automation E86060-K4921-A101-A3-7600

siemens simatic op17 manual

Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
Contextual Info: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation

SIEMENS THYRISTOR

Abstract: TEMPFET SIEMENS THYRISTOR thy pwm thyristor thyristor control ic with current sense Discrete Thyristor Chip siemens thy mosfet controlled thyristor SIEMENS FAST THYRISTOR 6 thyristor driver circuit
Contextual Info: Speed TEMPFET HL Application Note Temperature sense concept – Speed Tempfet® Principle of the temperature sense concept of the Speed-TEMPFET family Benno Köppl Introduction The well-known classic TEMPFET products from Siemens are a cost-effective solution for

siemens igbt

Abstract: siemens MODULES IGBTS siemens igbt chip Semiconductor Group igbt siemens led siemens automotive pilot light eupec igbts Siemens Smart Power IC
Contextual Info: Power electronics Sustained growth in power semiconductors The market for power semiconductors will double by the year 2000. Although bipolar power transistors and thyristors today account for about half of this market, their share will fall to about a third by the end of

pin diagram of bf 494 transistor

Abstract: siemens products transistor
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

Semiconductor 1346 transistor

Abstract: DIODE bfp 86 marking 53 Sot-343
Contextual Info: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

Contextual Info: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz

093.266

Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

TEA 1091

Abstract: DIODE bfp 86 siemens rs 1091
Contextual Info: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

transistor C 5611

Abstract: 35 micro-X Package MARKING CODE Q
Contextual Info: S IE M E N S BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-idB =19dBm 1.8 GHz Max. Available Gain G m a = l6dB at 1.8 GHz • Hermetically sealed microwave package

RF TRANSISTOR NPN MICRO-X

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

BFY405

Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

microwave transistor siemens

Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
Contextual Info: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA Q62702-F1144 1 =C 3=B LU II BFP 93A FEs ro ' it m ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

BFR194

Contextual Info: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code