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    SIEMENS TRANSISTORS RF Search Results

    SIEMENS TRANSISTORS RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS TRANSISTORS RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


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    SMD TRANSISTOR MARKING 76

    Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
    Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP


    OCR Scan     		PDF E3Sb05 BF517 BF550 BF554 BF569 OT-143 BFQ82 BFQ196

    D965

    Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
    Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


    OCR Scan     		PDF 235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430

    BF363

    Abstract: No abstract text available
    Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119


    OCR Scan     		PDF BF363 BF363

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn

    F587

    Abstract: TI 740
    Text: SSC D • ß 2 3 S b G 5 ÜQOMbTB 3 H S I E 6 . NPN Silicon RF Transistors BFS 18 BFS 18 R SIEMENS AKTIENGESELLSCHAF 0 ~ T ^ 3 I- '0 -BFS 19 BFS 19 R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits


    OCR Scan     		PDF 62702-F30 F587 TI 740

    BF245

    Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
    Text: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar


    OCR Scan     		PDF S23SbQS Q0044S7 o-BF245C Q62702-F236 Q62702-F209 Q62702-F182 Q62702-F205 BF245A AKTIEN6ESELLSCHAF-BF245C 103MHz BF245 BF 245 2SC 1885 transistor BF 509 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205

    BF 256

    Abstract: BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56
    Text: ¿si 1 asc t> m aaastos ooq44?g s bisieû v T^-zhJS’ N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 BF 256 A BF 256 B ' ~o-BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package


    OCR Scan     		PDF 00Q447G Q68000-A5168 Q62702-F413 Q68000-A5169 Q62702-F733 BF 256 BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56

    F245C

    Abstract: F245A BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c
    Text: 25C D • fl535b05 Q0Q4MS7 2 « S I E Û T - K BF 245 A BF 245 B "BF 245 C N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 57 - l ï D - BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar


    OCR Scan     		PDF fl535b05 62702-F236 Q62702-F209 Q62702-F182 62702-F205 Q00MMb3 F245A F245C F245C BC 245 C bf245 BF 245 2bf245 BF 245 B Siemens transistors rf C 245 b bf245c

    Q62702-F395

    Abstract: bf363 Q62702-F396 BF 362 BF362
    Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and


    OCR Scan     		PDF Q0QHM77 T0119 Q62702-F395 Q62702-F396 fl23SbQS -BF363 bf363 Q62702-F396 BF 362 BF362

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code Pin Configuration 1 2 3 Package1 BF 840


    OCR Scan     		PDF Q62702-F1240 Q62702-F1287 OT-23 535b05 Q1E1732

    BFT99

    Abstract: BFT99A Siemens transistors rf BFT 50 TH marking 99
    Text: SIEMENS BFT 99 BFT99A NPN Silicon RF Transistors • For low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 250 mA. • With integrated emitter stabilizing resistors. Type Marking Ordering Code BFT 99 BFT 99 Q62702-F524


    OCR Scan     		PDF BFT99 BFT99A Q62702-F524 O-117 BFT99A Q62702-F901 Siemens transistors rf BFT 50 TH marking 99

    TH 2190 Transistor

    Abstract: BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY18 BSY63 Q60218-Y17 Q60218-Y18
    Text: 2SC » • ÖS3SbDS 0QG4fl24 3 « S I E G j NPN Transistors for Switching Applications n -SIEMENS AKTIENGESELLSCHAF . B S Y17 BSY 18 BSY62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected


    OCR Scan     		PDF 00G4fl24 BSY62 Q60218-Y17 Q60218-Y18 Q60218-Y62-A Q60218-Y62-B Q60218-Y63 Coll4830 QT-35- BSY18 TH 2190 Transistor BSV62 BSY62 TRANSISTOR K 2191 BSV18 BSY17 BSY63 Q60218-Y17 Q60218-Y18

    222-1

    Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
    Text: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF 023SbQS Q62702-F414 -S122 fl23SbQ5 222-1 AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a

    Siemens 1836

    Abstract: No abstract text available
    Text: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° Epibase p o w e r d arlington transistors 1 5 W BD 8 6 1 , BD 8 6 3 , and BD 8 6 5 are monolithic silicon NPN epibase power darlington transistors


    OCR Scan     		PDF 53SbOS T-33-29 asaS25 235b05 QQG441b T-33-29 BD863 BD865 Siemens 1836

    BFS480

    Abstract: No abstract text available
    Text: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package


    OCR Scan     		PDF 900MHz OT-363 Q62702-F1531 BFS480

    Q62702F1240

    Abstract: f 840 h marking NC
    Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1


    OCR Scan     		PDF Q62702-F1240 62702-F1287 Q62702F1240 f 840 h marking NC

    BFT66

    Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
    Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband


    OCR Scan     		PDF 23SbQS Q62702-F456 Q62702-F457 BFT66, BFT67 103MHz fi535b05 DQ0H715 BFT66 BFT67 BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 Q62702-F457 QQQM710

    BF470

    Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
    Text: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic


    OCR Scan     		PDF 235bOS ESELLSCHAFi02 Q62702-F498 Q62702-F506 Q62902-B63 Q62902-B62 23SbQS QG04504 BF470 F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1


    OCR Scan     		PDF Q62702-F302 Q62702-F1241 235b05 DGbb751

    AC181

    Abstract: AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1
    Text: ESC D • û235bDS Q0Q403S ^ « S I E G 1 PNP Germanium Transistors AC 151 SIEMENS AKTIENGESELLSCHAF 9 04035- 2- A— 151T - Not for new design fo r AF input and driver stages o f m ediu m perform ance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case


    OCR Scan     		PDF 023SbGS Q0Q403S Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1 Q60103-X151-G Q62901-B1 AC181 AC161 AG151 AC16F Q60103-X151-D Q60103-X151-D1 Q60103-X151-E Q60103-X151-E1 Q60103-X151-F Q60103-X151-F1

    N2222A

    Abstract: 2N2221 n2222 2221 2221A N 2222 222-1 2221-2N 20VTA 2N2222
    Text: 2SC D • 0 2 3 S bQ S Q 0 Q 4 Ö Ö Ö 7 « S I E G . NPN Silicon Planar Transistors - - 2 N 2221 A 2 N 2222 A SIEMENS AKTIENGESELLSCHAF. - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF 023SbQS Q62702-F414 Q62702-S122 fl23SbQ5 102mA N2222A 2N2221 n2222 2221 2221A N 2222 222-1 2221-2N 20VTA 2N2222

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		PDF 200mA Q62702-C2479 OT-143R BCR400 0235bOS ehao7219 fl235b05