SIHB22N60EL Search Results
SIHB22N60EL Price and Stock
Vishay Siliconix SIHB22N60EL-GE3MOSFET N-CH 600V 21A TO263 |
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SIHB22N60EL-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SIHB22N60EL-GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60EL-GE3) |
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SIHB22N60EL-GE3 | Reel | 20 Weeks | 3,000 |
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SIHB22N60EL-GE3 |
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SIHB22N60EL-GE3 | Reel | 1,000 |
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SIHB22N60EL-GE3 | 1 |
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SIHB22N60EL-GE3 | 21 Weeks | 50 |
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SIHB22N60EL Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SIHB22N60EL-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 | Original | 151.63KB |
SIHB22N60EL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHB22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHB22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14 | |
Contextual Info: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg |
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SiHB22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |