SIHF12N65E Search Results
SIHF12N65E Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Datasheet Type |
PDF |
PDF Size |
Page count |
|---|---|---|---|---|---|---|---|
| SIHF12N65E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A TO-220 | Original | 7 |
SIHF12N65E Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
|---|---|---|---|
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Contextual Info: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC) |
Original |
SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHF12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHF12N65E AN609, 1135u 2552m 5225m 5370m 15-Oct-14 | |
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Contextual Info: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 |
Original |
SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
|
Contextual Info: SiHF12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration |
Original |
SiHF12N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |