Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHF820 Search Results

    SF Impression Pixel

    SIHF820 Price and Stock

    Vishay Siliconix SIHF820L-GE3

    SIHF820L-GE3 N-channel MOSFET Transistor, 2.5 A, 500 V, 3-Pin TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHF820L-GE3 Bulk 10
    • 1 -
    • 10 $2.36
    • 100 $2.24
    • 1000 $2.02
    • 10000 $2.02
    		Get Quote

    Vishay Intertechnologies SIHF820L-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIHF820L-GE3 950
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SIHF820L-GE3 760
    • 1 $3.936
    • 10 $3.936
    • 100 $3.936
    • 1000 $1.476
    • 10000 $1.476
    		Buy Now

    Vishay Intertechnologies SIHF820STRL-GE3

    MOSFET N-CHANNEL 500V (Alt: SIHF820STRL-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia SIHF820STRL-GE3 17 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SIHF820 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF820PBF

    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF PDF

    Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF820S, SiHF820S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    D 92 M - 02 DIODE

    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE PDF

    SiHF820AL

    Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3 PDF

    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		IRF820A, SiHF820A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF820ASPBF

    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 12-Mar-07 IRF820ASPBF PDF

    Contextual Info: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)


    Original     		IRF820S, SiHF820S IRF820L, SiHF820L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 2002/95/EC 11-Mar-11 PDF

    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 2002/95/EC 11-Mar-11 PDF

    Contextual Info: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		IRF820A, SiHF820A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF820

    Abstract: SiHF820 SiHF820-E3
    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 11-Mar-11 IRF820 SiHF820-E3 PDF

    AN609

    Abstract: IRF820A SiHF820A
    Contextual Info: IRF820A_RC, SiHF820A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF820A SiHF820A AN609, 12-Mar-10 AN609 PDF

    Contextual Info: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		IRF820A, SiHF820A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF820S, SiHF820S 2002/95/EC O-263) 18-Jul-08 PDF

    Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF820S, SiHF820S 2002/95/EC O-263) 11-Mar-11 PDF

    IRF820S

    Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the


    Original     		IRF820S, SIHF820S O-263) 18-Jul-08 IRF820S PDF

    AN609

    Abstract: IRF820AL IRF820AS SiHF820AL
    Contextual Info: IRF820AS_RC, IRF820AL_RC, SiHF820AS_RC, SiHF820AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRF820AS IRF820AL SiHF820AS SiHF820AL AN609, 12-Mar-10 AN609 PDF

    IRF820A

    Abstract: SiHF820A SiHF820A-E3
    Contextual Info: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)


    Original     		IRF820A, SiHF820A O-220 18-Jul-08 IRF820A SiHF820A-E3 PDF

    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiHF820AL

    Abstract: 4.5v to 100v input regulator IRF820AL IRF820AS SiHF820AL-E3
    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 4.5v to 100v input regulator IRF820AL IRF820AS SiHF820AL-E3 PDF

    IRF820

    Abstract: SiHF820 SiHF820-E3 IRF820 vishay
    Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 O-220 18-Jul-08 IRF820 SiHF820-E3 IRF820 vishay PDF

    Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    Contextual Info: IRF820S, SIHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		IRF820S, SIHF820S SMD-220 12-Mar-07 PDF