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Vishay Intertechnologies


Vishay Intertechnologies SIHFB9N60A-E3 MOSFET N-CHANNEL 600V - Tape and Reel (Alt: SIHFB9N60A-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFB9N60A-E3	Reel		111 Weeks	1,000	1 - 10 - 100 - 1000 $1.50875 10000 $1.41943	Buy Now

SIHFB9N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB O-220ABhay 11-Mar-11	PDF
IRFB9N60A Abstract: SiHFB9N60A SiHFB9N60A-E3 Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	IRFB9N60A, SiHFB9N60A O-220 18-Jul-08 IRFB9N60A SiHFB9N60A-E3	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFB9N60A Abstract: SiHFB9N60A SiHFB9N60A-E3 Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB 11-Mar-11 IRFB9N60A SiHFB9N60A-E3	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	IRFB9N60A, SiHFB9N60A O-220 O-220 IRFB9N60APbF 12-Mar-07	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: IRFB9N60A SiHFB9N60A Contextual Info: IRFB9N60A_RC, SiHFB9N60A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFB9N60A SiHFB9N60A AN609, 16-Apr-10 AN609	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB O-220ABtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB9N60A, SiHFB9N60A 2002/95/EC O-220AB O-220ABtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF