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SIHFI9540G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiHFI9540G Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHFI9540G Abstract: IRFI9540G SiHFI9540G-E3 Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 18-Jul-08 IRFI9540G SiHFI9540G-E3	PDF
AN609 Abstract: IRFI9540G SiHFI9540G Contextual Info: IRFI9540G_RC, SiHFI9540G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFI9540G SiHFI9540G AN609, 11-May-10 AN609	PDF
SiHFI9540G Abstract: SiHFI9540G-E3 IRFI9540G Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 18-Jul-08 SiHFI9540G-E3 IRFI9540G	PDF
SiHFI9540G Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SiHFI9540G Abstract: IRFI9540G Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 11-Mar-11 IRFI9540G	PDF
V61-14 Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 12-Mar-07 V61-14	PDF
SiHFI9540G Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9540G, SiHFI9540G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF