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Catalog Datasheet	Type	Document Tags	PDF
IRFP17N50L Abstract: SiHFP17N50L Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L O-247 18-Jul-08 IRFP17N50L	PDF
Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 11-Mar-11	PDF
99AB Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 99AB	PDF
Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L O-247 12-Mar-07	PDF
Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFP17N50L Abstract: SiHFP17N50L 99AB Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L O-247 18-Jul-08 IRFP17N50L 99AB	PDF
99AB Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration	Original	IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 99AB	PDF
Contextual Info: IRFP17N50L_RC, SiHFP17N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFP17N50L SiHFP17N50L AN609, 07-Jun-10	PDF