IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP360LC
|
Untitled
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
|
Original
|
PDF
|
IRFP360,
SiHFP360
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
O-247
18-Jul-08
IRFP360LC
|
IRFP360
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching
|
Original
|
PDF
|
IRFP360,
SiHFP360
O-247
O-247
IRFP360
|
irfp360
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
|
Original
|
PDF
|
IRFP360,
SiHFP360
2002/95/EC
O-247AC
O-247AC
O-220AB
11-Mar-11
irfp360
|
Untitled
Abstract: No abstract text available
Text: IRFP360_RC, SiHFP360_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFP360
SiHFP360
AN609,
18-Jun-10
|
Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRFP360
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
|
Original
|
PDF
|
IRFP360,
SiHFP360
2002/95/EC
O-247AC
11-Mar-11
IRFP360
|
IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
2002/95/EC
11-Mar-11
IRFP360LC
|
IRFP360
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching
|
Original
|
PDF
|
IRFP360,
SiHFP360
O-247
O-247
O-220
12-Mar-07
IRFP360
|
IRFP360
Abstract: 90292 IRFP360PBF
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 30 • Fast Switching
|
Original
|
PDF
|
IRFP360,
SiHFP360
O-247
O-247
18-Jul-08
IRFP360
90292
IRFP360PBF
|
Untitled
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
|
Original
|
PDF
|
IRFP360,
SiHFP360
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110
|
Original
|
PDF
|
IRFP360,
SiHFP360
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
|
Untitled
Abstract: No abstract text available
Text: IRFP360LC_RC, SiHFP360LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
PDF
|
IRFP360LC
SiHFP360LC
AN609,
18-Jun-10
|
IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
O-247AC
11-Mar-11
IRFP360LC
|
IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
O-247
18-Jul-08
IRFP360LC
|
Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
PDF
|
IRFP360LC,
SiHFP360LC
12-Mar-07
|