SIHFR320 Search Results
SIHFR320 Price and Stock
Vishay Siliconix SIHFR320TRL-GE3MOSFET N-CHANNEL 400V |
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SIHFR320TRL-GE3 | Cut Tape | 2,784 | 1 |
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Vishay Siliconix SIHFR320-GE3MOSFET N-CH 400V 3.1A DPAK |
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SIHFR320-GE3 | Tube | 1,896 | 1 |
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Vishay Siliconix SIHFR320TR-GE3MOSFET N-CHANNEL 400V |
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SIHFR320TR-GE3 | Reel | 2,000 |
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Vishay Intertechnologies SIHFR320TRL-GE3MOSFET N-CHANNEL 400V - Tape and Reel (Alt: SIHFR320TRL-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHFR320TRL-GE3 | Reel | 8 Weeks | 3,000 |
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SIHFR320TRL-GE3 |
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SIHFR320TRL-GE3 | Bulk | 3,000 |
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SIHFR320TRL-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SIHFR320-GE3MOSFET N-CHANNEL 400V - Tape and Reel (Alt: SIHFR320-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHFR320-GE3 | Reel | 8 Weeks | 3,000 |
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SIHFR320-GE3 | 8,220 |
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SIHFR320-GE3 | Reel | 3,000 |
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SIHFR320-GE3 | 1 |
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SIHFR320-GE3 | 9 Weeks | 75 |
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SIHFR320 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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| SIHFR320-GE3 | Vishay Siliconix | MOSFET N-CH 400V 3.1A DPAK | Original | |||
| SIHFR320TR-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 400V | Original | |||
| SIHFR320TRL-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 400V | Original |
SIHFR320 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFR320PBF
Abstract: IRFR320TRL
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Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC IRFR320PBF IRFR320TRL | |
inductor 1 mHContextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC) |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 12-Mar-07 inductor 1 mH | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC | |
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Contextual Info: SiHFR320_RC, SiHFU320_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiHFR320 SiHFU320 AN609, CONFIGUR10 5050m 5629m 1563u 0451m | |
IRFR320
Abstract: IRFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 SiHFU320
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IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 2002/95/EC O-252) SiHFR320-E3 SiHFR320-GE3 | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252) |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 O-252) 2002/95/EC. | |
IRFR320
Abstract: irfu320 SiHFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 IRFR320TRLPBF IRFU320PBF
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IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 2002/95/EC O-252) SiHFR320-E3 SiHFR320-GE3 IRFR320TRLPBF IRFU320PBF | |
IRFR320TRLContextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 O-251) IRFR320TRL | |
IRFU320PBF
Abstract: irfr320 IRFU320 SiHFR320 SiHFR320-E3 SiHFU320
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IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 18-Jul-08 IRFU320PBF irfr320 IRFU320 SiHFR320-E3 | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 2002/95/EC O-252) | |
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Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated |
Original |
IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 O-251) |