SIHG22N Search Results
SIHG22N Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHG22N50D-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC | Original | 8 | |||
| SIHG22N50D-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 22A TO-247AC | Original | 8 | |||
| SIHG22N60AE-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO247AC | Original | 138.33KB | |||
| SIHG22N60AEL-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V | Original | 131.83KB | |||
| SIHG22N60E-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC | Original | 8 | |||
| SIHG22N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 19A TO247AC | Original | 198.48KB | |||
| SIHG22N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO247AC | Original | 8 | |||
| SIHG22N60EL-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO247AC | Original | 146.35KB | |||
| SIHG22N60S-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO247 | Original | 8 | |||
| SIHG22N65E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-247AC | Original | 194.46KB |
SIHG22N Price and Stock
Vishay Siliconix SIHG22N60EF-GE3MOSFET N-CH 600V 19A TO247AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG22N60EF-GE3 | Tube | 793 | 1 |
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Buy Now | |||||
Vishay Siliconix SIHG22N60E-GE3MOSFET N-CH 600V 21A TO247AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG22N60E-GE3 | Tube | 388 | 1 |
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SIHG22N60E-GE3 | 63 |
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Vishay Siliconix SIHG22N60E-E3MOSFET N-CH 600V 21A TO247AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG22N60E-E3 | Tube | 12 | 1 |
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SIHG22N60E-E3 | 850 | 2 |
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SIHG22N60E-E3 | 680 |
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Vishay Siliconix SIHG22N50D-E3MOSFET N-CH 500V 22A TO247AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG22N50D-E3 | Tube | 500 |
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Buy Now | ||||||
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SIHG22N50D-E3 | 350 |
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Get Quote | |||||||
Vishay Siliconix SIHG22N60S-E3MOSFET N-CH 600V 22A TO247AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG22N60S-E3 | Tube | 500 |
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Buy Now | ||||||
SIHG22N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are |
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SiHG22N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC |
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SiHG22N60S O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIHG22N60EContextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses |
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SiHG22N60E O-247AC 2002/95/EC 11-Mar-11 | |
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Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHG22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses |
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SiHG22N60E 2002/95/EC O-247AC 11-Mar-11 | |
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Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are |
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SiHG22N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested |
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SiHG22N60S O-247AC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC |
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SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263) | |
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Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
mosfet 452Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet 452 | |
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Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHG22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG22N65E AN609, 7589u 6282m 6682m 0918u 23-Jul-14 | |
SiHG22N60EL_RCContextual Info: SiHG22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14 SiHG22N60EL_RC | |
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SiHG22N60SContextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability |
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SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08 | |
SiHG22N60SContextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC) |
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SiHG22N60S O-247AC 2002/95/EC 11-Mar-11 | |
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Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested |
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SiHG22N60S O-247AC 2002/95/EC 11-Mar-11 | |
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Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 98 • High EAR Capability Qgs (nC) 17 • Lower Figure-of-Merit Ron x Qg Qgd (nC) |
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SiHG22N60S 2002/95/EC O-247AC O-247AC SiHG22N60S-E3 SiHG22N60S-GE3 11-Mar-11 | |
SiHG22N60SContextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability |
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SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08 | |
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Contextual Info: SiHG22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability |
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SiHG22N60S O-247 2002/95/EC SiHG22N60S-E3 18-Jul-08 | |
SiHG22N50Contextual Info: SiHG22N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG22N50D AN609, 9202m 8712m 3875m 7679m 0616m 2369m 4858m 4969u SiHG22N50 | |
sihg22n60eContextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
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SiHG22N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC |
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SiHG22N60S O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |