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Vishay Siliconix SIHG25N40D-E3 MOSFET N-CH 400V 25A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG25N40D-E3	Tube	43		1	1 $4.65 10 $3.079 100 $3.079 1000 $3.079 10000 $3.079	Buy Now
Vishay Siliconix SIHG25N40D-GE3 MOSFET N-CH 400V 25A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG25N40D-GE3	Tube	42		1	1 $4.65 10 $3.079 100 $3.079 1000 $3.079 10000 $3.079	Buy Now
Vishay Intertechnologies SIHG25N40D-GE3 N-CHANNEL 400V - Tape and Reel (Alt: SIHG25N40D-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG25N40D-GE3	Reel		111 Weeks	500	1 - 10 - 100 - 1000 $2.38875 10000 $2.352	Buy Now
Newark	SIHG25N40D-GE3	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	SIHG25N40D-GE3				1	1 $3.19 10 $2.78 100 $2.31 1000 $2.21 10000 $2.21	Get Quote
Vishay Intertechnologies SIHG25N40D-E3 N-CHANNEL 400V - Tape and Reel (Alt: SIHG25N40D-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG25N40D-E3	Reel		111 Weeks	500	1 - 10 - 100 - 1000 $3.00203 10000 $2.95584	Buy Now
Vishay Intertechnologies SIHG25N40DGE3 Power MOSFET Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG25N40DGE3		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHG25N40D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SIHG25N40D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-247AC		Original	PDF		8
SIHG25N40D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-247AC		Original	PDF		8

SIHG25N40D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2002/95/EC O-247AC 11-Mar-11	PDF
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
sihg25n40d Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2002/95/EC O-247AC 11-Mar-11	PDF
S120625 Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625	PDF
S120625 Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625	PDF
Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)	Original	SiHG25N40D 2011/65/EU O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF