SIHG47N65E Search Results
SIHG47N65E Price and Stock
Vishay Siliconix SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC |
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SIHG47N65E-GE3 | Tube | 484 | 1 |
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SIHG47N65E-GE3 | 400 | 1 |
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Vishay Intertechnologies SIHG47N65E-GE3N-CHANNEL 650V - Tape and Reel (Alt: SIHG47N65E-GE3) |
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SIHG47N65E-GE3 | Reel | 20 Weeks | 500 |
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SIHG47N65E-GE3 | 620 |
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SIHG47N65E-GE3 | Bulk | 421 | 1 |
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SIHG47N65E-GE3 | Tube | 2,000 | 25 |
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SIHG47N65E-GE3 | 1 |
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SIHG47N65E-GE3 | 21 Weeks | 25 |
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SIHG47N65E-GE3 | 176 | 20 |
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Vishay Semiconductors SIHG47N65E-GE3 |
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SIHG47N65E-GE3 | 176 |
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SIHG47N65E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SIHG47N65E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 47A TO-247AC | Original | 7 |
SIHG47N65E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses |
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SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) |
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SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses |
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SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG47N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG47N65E AN609, 9059m 3887m 1860m 4652m 02-Apr-13 | |
AN844Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power |
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AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844 | |
VJ Hi-RelContextual Info: Vishay Intertechnology, Inc. Medical Medical Equipment One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components MED I CAL Medical Medical More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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SFH6732 VMN-MS6984-1410-ME VJ Hi-Rel |