SIHG73N60E Search Results
SIHG73N60E Price and Stock
Vishay Siliconix SIHG73N60E-E3MOSFET N-CH 600V 73A TO247AC |
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SIHG73N60E-E3 | Tube | 500 |
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Vishay Intertechnologies SIHG73N60E-E3N-CHANNEL 600V - Tape and Reel (Alt: SIHG73N60E-E3) |
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SIHG73N60E-E3 | Reel | 20 Weeks | 500 |
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SIHG73N60E-E3 |
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Vishay Intertechnologies SIHG73N60E-GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHG73N60E-GE3) |
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SIHG73N60E-GE3 | Reel | 20 Weeks | 500 |
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SIHG73N60E-GE3 | 322 |
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SIHG73N60E-GE3 | Bulk | 1 |
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SIHG73N60E-GE3 | Tube | 2,500 | 100 |
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SIHG73N60E-GE3 | 390 | 1 |
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SIHG73N60E-GE3 | 21 Weeks | 25 |
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SIHG73N60E-GE3 | 1,000 | 500 |
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SIHG73N60E-GE3 | 509 |
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Vishay Siliconix SIHG73N60E-GE3SiHG73N60E-GE3 N-channel MOSFET Transistor, 73 A, 600 V, 3-Pin TO-247AC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG73N60E-GE3 | Bulk | 500 |
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SIHG73N60E-GE3 | 800 | 1 |
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Vishay Intertechnologies SIHG73N60EGE3E SERIES POWER MOSFET Power Field-Effect Transistor, 73A I(D), 600V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG73N60EGE3 | 500 |
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SIHG73N60E Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHG73N60E-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO247AC | Original | |||
SIHG73N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO247AC | Original |
SIHG73N60E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiHG73N60E
Abstract: SIHG73N60E-GE3
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SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG73N60E-GE3 | |
Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • Low input capacitance (Ciss) 0.039 • Reduced switching and conduction losses |
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SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiHG73N60EContextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SiHG73N60EContextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses |
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SiHG73N60E O-247AC 2002/95/EC 11-Mar-11 | |
Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIHG73N60Contextual Info: SiHG73N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG73N60E AN609, 7090m 3271m 2566m 7829m 6687m 5704m 7069m 0190m SIHG73N60 | |
SIHG73N60
Abstract: SiHG73N60E
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SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG73N60 | |
SiHG73N60E
Abstract: SIHG73N60E-GE3 SIHG73N60
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SiHG73N60E O-247AC 2002/95/EC 11-Mar-11 SIHG73N60E-GE3 SIHG73N60 | |
TO-247 FULLPAK Package
Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
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enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E | |
draloric potentiometers cermet 581
Abstract: WISTRON power sequence
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AN844Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power |
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AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844 | |
Contextual Info: Vishay Intertechnology, Inc. SuPER 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products mkP1848S フィルムコンデンサ 薄型設計のフィルムコンデンサ 2 VCuT05D1-SD0 双方向対称型 |
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com/ref/2012S12 mkP1848S VCuT05D1-SD0 clP0603 VMN-MS6703-1205 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
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