IRL540S
Abstract: SiHL540S SiHL540S-E3
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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PDF
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IRL540S,
SiHL540S
O-263)
2002/95/EC
11-Mar-11
IRL540S
SiHL540S-E3
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smd diode 841
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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Original
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PDF
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IRL540S,
SiHL540S
SMD-220
18-Jul-08
smd diode 841
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Untitled
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRL540S,
SiHL540S
O-263)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRL540S,
SiHL540S
2002/95/EC
O-263)
18-Jul-08
|
smd diode 841
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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Original
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PDF
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IRL540S,
SiHL540S
SMD-220
12-Mar-07
smd diode 841
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Untitled
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRL540S,
SiHL540S
2002/95/EC
O-263)
11-Mar-11
|
IRL540S
Abstract: SiHL540S SiHL540S-E3
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRL540S,
SiHL540S
O-263)
18-Jul-08
IRL540S
SiHL540S-E3
|
Untitled
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRL540S,
SiHL540S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRL540S_RC, SiHL540S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRL540S
SiHL540S
AN609,
8314m
0659m
4384m
5026m
2686m
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Untitled
Abstract: No abstract text available
Text: IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () 100 VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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IRL540S,
SiHL540S
2002/95/EC
O-263)
11-Mar-11
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