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Catalog Datasheet	MFG & Type	PDF	Document Tags
IRLIZ44G Abstract: SiHLIZ44G-E3 SiHLIZ44G Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 18-Jul-08 IRLIZ44G SiHLIZ44G-E3
Untitled Abstract: No abstract text available Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 O-22emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHLIZ44G Abstract: No abstract text available Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRLIZ44G Abstract: SiHLIZ44G-E3 SiHLIZ44G Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 18-Jul-08 IRLIZ44G SiHLIZ44G-E3
IRLIZ44G Abstract: SiHLIZ44G-E3 SiHLIZ44G Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 11-Mar-11 IRLIZ44G SiHLIZ44G-E3
SiHLIZ44G Abstract: No abstract text available Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 12-Mar-07
1.4593 Abstract: AN609 IRLIZ44G Text: IRLIZ44G_RC, SiHLIZ44G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRLIZ44G SiHLIZ44G AN609, 8570m 8196m 9562m 3321m 6982m 2438m 05-Oct-10 1.4593 AN609
SiHLIZ44G Abstract: No abstract text available Text: IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 5 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 66 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRLIZ44G, SiHLIZ44G O-220 O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12