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    SIHP14N50D Price and Stock

    Vishay Siliconix SIHP14N50D-E3

    MOSFET N-CH 500V 14A TO220AB
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    DigiKey SIHP14N50D-E3 Tube 1,000
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    • 1000 $1.25545
    • 10000 $1.25545
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    Bristol Electronics SIHP14N50D-E3 400
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    Vishay Siliconix SIHP14N50D-GE3

    MOSFET N-CH 500V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP14N50D-GE3 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.25545
    • 10000 $1.25545
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    Vishay Intertechnologies SIHP14N50D-GE3

    Mosfet Transistor, N Channel, 14 A, 500 V, 0.32 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHP14N50D-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIHP14N50D-GE3 Bulk 1
    • 1 $3.05
    • 10 $2.58
    • 100 $2.1
    • 1000 $1.79
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    TME SIHP14N50D-GE3 1
    • 1 $2.62
    • 10 $2.2
    • 100 $1.75
    • 1000 $1.39
    • 10000 $1.39
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    Vishay Intertechnologies SIHP14N50D-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIHP14N50D-E3 200
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    SIHP14N50D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP14N50D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-200AB Original PDF
    SIHP14N50D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-200AB Original PDF

    SIHP14N50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet to-220ab

    Abstract: 91512 SiHP14N50D
    Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHP14N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet to-220ab 91512

    Untitled

    Abstract: No abstract text available
    Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHP14N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP14N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP14N50D AN609, 7252m 6040m 6395m 6003m 7660m 5478m 6766m 5019m

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836