Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHP30N60E Search Results

    SF Impression Pixel

    SIHP30N60E Price and Stock

    Vishay Siliconix SIHP30N60E-E3

    MOSFET N-CH 600V 29A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP30N60E-E3 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics SIHP30N60E-E3 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Siliconix SIHP30N60E-GE3

    MOSFET N-CH 600V 29A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP30N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.6875
    • 10000 $2.6875
    		Buy Now

    Vishay Intertechnologies SIHP30N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHP30N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHP30N60E-E3 Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.6875
    • 10000 $2.52941
    		Buy Now
    Mouser Electronics SIHP30N60E-E3 3,807
    • 1 $5.66
    • 10 $4.43
    • 100 $3.44
    • 1000 $2.8
    • 10000 $2.74
    		Buy Now

    Vishay Intertechnologies SIHP30N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHP30N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHP30N60E-GE3 Reel 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.6875
    • 10000 $2.52941
    		Buy Now
    Mouser Electronics SIHP30N60E-GE3 961
    • 1 $5.66
    • 10 $4.43
    • 100 $3.23
    • 1000 $2.68
    • 10000 $2.68
    		Buy Now
    Newark SIHP30N60E-GE3 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.35
    • 10000 $3.35
    		Buy Now
    TTI SIHP30N60E-GE3 Tube 5,000 50
    • 1 -
    • 10 -
    • 100 $3.56
    • 1000 $3.35
    • 10000 $3.35
    		Buy Now
    EBV Elektronik SIHP30N60E-GE3 20 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIHP30N60EGE3

    POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHP30N60EGE3 900
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SIHP30N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP30N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220AB Original PDF
    SIHP30N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220AB Original PDF

    SIHP30N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two


    Original     		PDF SiHP30N60E 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHP30N60E-E3

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single COMPLIANT •


    Original     		PDF SiHP30N60E 2002/95/EC 11-Mar-11 SiHP30N60E-E3

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP30N60E AN609, 5779m 3451m 9055m 7699u 10-Feb-15

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		PDF SiHP30N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836