SII003 Search Results

BSM10GD100

Abstract: BSM10GD100D
Contextual Info: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1

BSM10GD100D

Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
Contextual Info: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes

IGBT K 40 T 1202

Abstract: 40 t 1202 igbt BUP306D
Contextual Info: SIEMENS BUP306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 306D VCE h 1200V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code

din 1190 diode

Abstract: 305d
Contextual Info: SIEMENS BUP 305 D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 305 D VCB h 1200V 12A Pin 1 Pin 2 Pin 3 G C E Package

Contextual Info: SIEMENS IG B T M o d u le Prelim inary Data BSM 0 5 G D 100D VCE= 1000 V / c = 6 x 5.5 A at Tc = 25 "C / c = 6 x 5.0 A at T c = 40 C • • • • • Power module 3-phase full bridge Including fast free-wheel diodes Package with insulated metal base plate