2E14
Abstract: 4h sic
Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield
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N00014-02-C-0302,
2E14
4h sic
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MA45334
Abstract: No abstract text available
Text: MA45334 SILICON ABRUPT TUNING VARACTOR DIODE DESCRIPTION: The ASI MA45334 is a Silicon Abrupt Tuning Varactor, designed for applications through S-band. PACKAGE STYLE DO-7 FEARTURES: • High Q • Low Leakage • Low Post Tuning Drift MAXIMUM RATINGS V 30 V
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MA45334
MA45334
CT0/CT30
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seeker
Abstract: MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556
Text: High Q Hyperabrupt Tuning Varactors MA4ST550 Series V3.00 Case Styles Features ● ● ● ● High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt
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MA4ST550
seeker
MA4ST551
MA4ST552
MA4ST553
MA4ST554
MA4ST555
MA4ST556
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2n2222 national semiconductor
Abstract: Widlar national 2n2222 2N2222 national 2n2222 transistor LM113 2N2222 NPN Transistor features LM113 equivalent 2N2222 AN-56
Text: INTRODUCTION Temperature compensated zener diodes are the most easily used voltage reference However the lowest voltage temperature-compensated zener is 6 2V This makes it inconvenient to obtain a zero temperature-coefficient reference when the operating supply voltage is 6V or lower With the
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LM113
2n2222 national semiconductor
Widlar
national 2n2222
2N2222 national
2n2222 transistor
2N2222 NPN Transistor features
LM113 equivalent
2N2222
AN-56
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photodiode ge
Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Text: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,
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26-Aug-08
photodiode ge
TSAL6200
TSFF5410
TSHA550
TSHF5410
TSUS540
detect radiation
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MPSA43 equivalent
Abstract: LB-41 LM103 LM134 MPSA43 LM103 zener LB41
Text: National Semiconductor Linear Brief 41 June 1978 Increasing interest in battery-operated analog and digital circuitry in recent years has created the need for a micro-power voltage reference. In particular, the reference should draw 10 µA or less and operate from a single 5V supply. These requirements eliminate zener diodes which tend to have unpredictable temperature drift and are noisy at low currents
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LM103
com959
MPSA43 equivalent
LB-41
LM134
MPSA43
LM103 zener
LB41
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254 nm uv LED
Abstract: Chiller umbilical connector UV diode 250 nm r134a Q302 Q303-HD 532 nm laser diode umbilical Q3-04
Text: COMMERCIAL LASERS High-Power Q-Switched Diode-Pumped UV Laser Q Series Key Features • Highest commercially available pulse energy and peak power • Tighter process control due to superior energy stability enabled by unique intracavity harmonic generation
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498-JDSU
5378-JDSU
254 nm uv LED
Chiller
umbilical connector
UV diode 250 nm
r134a
Q302
Q303-HD
532 nm laser diode
umbilical
Q3-04
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ML4708
Abstract: IMPATT
Text: ML 400« SERIES SILICON SINGLE DRIFT IMPATT DIODES The M L 4700 Series o f single drift silicon im patt diodes are specifically designed for use as fundam ental frequency direct dc to RF conversion microwave oscillators and amplifiers in the frequency range 5-35GHz.
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5-35GHz.
ML4708
IMPATT
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Untitled
Abstract: No abstract text available
Text: A/jfc'XsA MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS ■ REPRODUCIBLE C-V CURVES Applications The MA4ST550 family of high Q Silicon Hyperabrupt
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MA4ST550
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Untitled
Abstract: No abstract text available
Text: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :
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4L13303
04flb
4710xH
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IMPATT
Abstract: No abstract text available
Text: MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH X-BAND ■ CAN BE SCREENED TO TX, TXV SPECIFICATIONS Applications The MA45300 series of silicon planar abrupt junction tun
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MA45300
IMPATT
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T393D
Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
Text: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization
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MA-4B600
T393D
impatt diode
MICROWAVE ASSOCIATES
impatt diode operation
impatt
ODS-91
radar impatt
impatt diode W band
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LM308A
Abstract: No abstract text available
Text: MOTOROLA LM308A SEMICONDUCTOR TECHNICAL DATA SUPER GAIN OPERATIONAL AMPLIFIER Precision Operational Amplifier SILICON MONOLITHIC INTEGRATED CIRCUIT The LM 308A operational am plifier provides high input impedance, low input offset and tem perature drift, and low noise. These characteristics are made
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LM308A
300pF
LM101A
LM308A
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Gunn Diode 72 GHz
Abstract: MA456
Text: AfoCC-û MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE \ i * r h f— — J 4 ■ LOW POST TUNING DRIFT - ■ CUSTOM DESIGNS AVAILABLE 1 = 54 / - "V V / ^ ■ FREQUENCY RANGE THROUGH
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MA45300
Gunn Diode 72 GHz
MA456
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impatt diode
Abstract: impatt diode operation AN961 5082-0710 IMPATT
Text: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating
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MIL-S-19500
impatt diode
impatt diode operation
AN961
5082-0710
IMPATT
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impatt diode
Abstract: No abstract text available
Text: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products
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Mb133â
4710xH
impatt diode
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ODS-30
Abstract: No abstract text available
Text: MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS ■ REPRODUCIBLE C-V CURVES Applications The M A4ST550 fam ily of high Q S ilicon H yperabrupt
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MA4ST550
A4ST550
4ST551-563)
S-134)
A4ST551
ODS-134)
4ST551-556)
ODS-30
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gunn diode x band series 45200
Abstract: MA45200 A4520
Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES ■ CUSTOM DESIGNS AVAILABLE ■ LOW POST TUNING DRIFT ■ FREQUENCY RANGE VHF — Ku-BAND ■ CAN BE SCREENED TO TX, TXV
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MA45200
gunn diode x band series 45200
A4520
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impatt diode
Abstract: apc-7 connector impatt impatt diode operation radar impatt CW doppler radar Silicon drift diode hp 0611 diode GG 14
Text: H E W L E T T PACKARD COMPONENTS DIODES HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 10-14 GHZ Features AND STEP RECOVERY HIGH POWER O U TP U T Typically: 2.5W from 10 to 14 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IEN T O PERATIO N
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MIL-S-19500
impatt diode
apc-7 connector
impatt
impatt diode operation
radar impatt
CW doppler radar
Silicon drift diode
hp 0611
diode GG 14
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impatt diode
Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Text: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N
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MIL-S-19500
impatt diode
apc-7 connector
Z 0607
CW doppler radar
impatt
radar impatt
AN-968
cw doppler
impatt diode operation
AN962
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Untitled
Abstract: No abstract text available
Text: an A M P com pany High Q Hyperabrupt Tuning Varactors MA4ST550 Series V3.00 Case Styles Features • High Q • Usable Capacitance Change of 7:1 • Low Reverse Leakage for Good Post Tuning Drift Characteristics • Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt
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MA4ST550
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MA4ST550
Abstract: ODS-134 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556 MA4ST557 MA4ST558
Text: M/A-COM SEMICONDtBRLNGTON MA- 11 D S b 4 2 S l 4 DDG121b. G « M I C I ''0 7 '' MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS
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MA4ST550
ODS-134
MA4ST551
MA4ST552
MA4ST553
MA4ST554
MA4ST555
MA4ST556
MA4ST557
MA4ST558
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impatt
Abstract: Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334
Text: M/ A- CO H S E U I C O N D n B R L N G T O N Ajm 11 D Sb42214 G0D12S0 0 H M I C 1-0 MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors * V Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH
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Sb42214
G0D1250
MA45300
impatt
Gunn Diode
MA45338
IMPATT Diode
stub tuner waveguide
MA45330
MA45331
MA45332
MA45333
MA45334
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impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
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b427414
ND487C1-3R
ND487C2-00
ND487C2-3P
ND487C2-3R
ND487R1-00
ND487R1-3P
ND487R1-3R
ND487R2-00
ND487R2-3P
impatt diode
1ST23
ND487
ND8L60W1T
impatt
1ST11
ND8M30-1N
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