SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Search Results

WBFBP-02C

Abstract: transistor marking code 325 Schottky schottky barrier rectifiers
Contextual Info: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type

SCS520

Abstract: Schottky Barrier Rectifiers low current SCHOTTKY BARRIER RECTIFIERS
Contextual Info: SCS520DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type

Contextual Info: SCS521DS 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION ● Silicon epitaxial planar Schottky barrier Diodes ● Small surface mounting type

ZC2800

Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
Contextual Info: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Contextual Info: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

SCS70DSTN

Contextual Info: SCS70DSTN 0.07 A, 70 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring

SCS40STN

Contextual Info: SCS40STN 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring

Contextual Info: 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB108100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB229100MA 2SB229100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB229100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB267100MA 2SB267100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB267100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB183060MA 2SB183060MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB183060MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB166100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

Contextual Info: 2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current typical

top metal

Abstract: silan
Contextual Info: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB065030MLJY 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB065030MLJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB075060ML 2SB075060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB075060ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB035100ML 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB035100ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;

Contextual Info: 2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB083040ML 2SB083040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB083040ML is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;

Contextual Info: 2SB035040ML 2SB035040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB065030ML 2SB065030ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.

Contextual Info: 2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;