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    ZC2811 Price and Stock

    Diodes Incorporated ZC2811ETA

    DIODE SCHOTTKY 15V 20MA SOT23-3
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    DigiKey ZC2811ETA Reel
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    Zetex / Diodes Inc ZC2811ETA

    RECTIFIER DIODE,SCHOTTKY,15V V(RRM),SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ZC2811ETA 1,520
    • 1 $2.5
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    ZC2811ETA 1,400
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    ZC2811 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZC2811 Zetex Semiconductors SCHOTTKY BARRIER DIODES Original PDF
    ZC2811 Zetex Semiconductors DOIDE SCHOTTKY 15V 0.02A 2TO-92 Original PDF
    ZC2811 Zetex Semiconductors SCHOTTKY BARRIER DIODES Original PDF
    ZC2811 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC2811 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC2811 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC2811 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC2811 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC2811C Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    ZC2811C Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
    ZC2811C Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZC2811E Zetex Semiconductors SOT23 SCHOTTKY BARRIER DIODE Original PDF
    ZC2811E Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
    ZC2811E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZC2811E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZC2811E-E8 Zetex Semiconductors DIODE SCHOTTKY DIODE 15V 0.02A 3SOT-23 Original PDF
    ZC2811ETA Diodes Incorporated Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 15V 0.02A SOT23-3 Original PDF
    ZC2811H Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF

    ZC2811 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZC2800E

    Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
    Text: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA


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    PDF ZC2800E ZC2811E ZC5800E ZC2811E) ZC2800E MV SOT23 ZC2811E ZC5800E DSA003721

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL


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    PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E

    IR 3109

    Abstract: ZC2800 ZC2811 ZC5800
    Text: ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION TYPICAL CHARACTERISTICS 0.8 0.8 0.6 CATHODE 0.6 I =10mA 1 ANODE 2 I =10mA F F 0.4 E-Line TO92 Compatible 0.4 I =1.0mA F I =1.0mA ABSOLUTE MAXIMUM RATINGS.


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    PDF ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 IR 3109 ZC5800

    BAT54A

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6


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    PDF BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E BAT54A

    rtc with internal backup battery

    Abstract: supercapacitor applications RTC 1N5811 AN154 X1205 X1226 X1227 X1228 X1286 X1288
    Text: Intersil Real Time Clock Family User’s Guide Application Note New Devices Integrate Crystal Compensation Circuitry Overall Functionality Intersil Real Time Clock RTC products integrate the real time clock function with microprocessor supervisory functions and nonvolatile memory to form a vital system


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    PDF 14-pin 768kHz AN154 rtc with internal backup battery supercapacitor applications RTC 1N5811 X1205 X1226 X1227 X1228 X1286 X1288

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    LQM2MPN

    Abstract: LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T
    Text: LTC3526L-2/LTC3526LB-2 550mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN Features Description Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells n V Start-Up Voltage: 680mV IN n 1.5V to 5.25V V OUT Range


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    PDF LTC3526L-2/LTC3526LB-2 550mA 100mA 200mA 680mV LTC3526L-2) LTC3526LB-2) 3526L-2/LTC3526LB-2 LTC3400/LTC3400B 600mA LQM2MPN LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T

    Untitled

    Abstract: No abstract text available
    Text: LTC3526-2/LTC3526B-2 500mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN NOT RECOMMENDED FOR NEW DESIGNS Contact Linear Technology for Potential Replacement FEATURES DESCRIPTION Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells


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    PDF LTC3526-2/LTC3526B-2 500mA 100mA 200mA 850mV LTC3526-2) LTC3526B-2) LTC3400/LTC3400B 600mA LTC3527/LTC3527-1

    how to stepup 0.5v to 5v

    Abstract: No abstract text available
    Text: LTC3525L-3 400mA Micropower Synchronous Step-Up DC/DC Converter with Output Disconnect FEATURES n n n n n n n n n n n n n DESCRIPTION Start-Up at 0.7V Typical, 0.88V Guaranteed Up to 95% Efficiency Output Disconnect and Inrush Current Limit 3V Fixed Output Voltage


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    PDF LTC3525L-3 400mA 160mA 3525L-3 LTC3525 400mA, LTC3526/LTC3526B 500mA 3525lfa how to stepup 0.5v to 5v

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    zc825

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 capac832A zc825 ZC830A ZC831A ZC832A

    SOT-23 LOA

    Abstract: ZC2800 ZC2811 ZC2800E ZC2810 ZC5800 ZCI2811 LOA SOT23 ferranti
    Text: FERRANTI semiconductors ZC2800 ZC2810 ZC2811 ZC5800 S c h o ttk y Barrier D iodes NOT TO SCALE FEATURES • Available in three packages: Economical Plastic E-line M icro m in iatu re SOT-23 High R eliability Glass DO-35 • Low Leakage Current • Low Forward Voltage


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    PDF ZC2800 ZC2810 ZC2811 ZC5800 OT-23 DO-35 Q05min ZC2800H, ZC2810H, SOT-23 LOA ZC2800E ZC5800 ZCI2811 LOA SOT23 ferranti

    Untitled

    Abstract: No abstract text available
    Text: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800


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    PDF ZC2800 ZC2811 ZC5800 ZC2800 ZC2811

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES SSUE 2 - MARCH 1995 O DIODE PIN CONNECTION ii PARTM ARKING DETAIL ZC2800E - E6 ZC2811E - E8 ZC5800E - E9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L P o w e r D is s ip a tio n at T amb= 25‘>C P .o t


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    PDF ZC2800E ZC2811E ZC5800E ZC5800E

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C


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    PDF ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E-E8 ZC5800E-E9

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current


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    PDF 7E50533 ZC2800Er ZC2810E ZC2811E ZC5800E ZC2800E

    IR 3109

    Abstract: ZC5800
    Text: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 - MARCH 94 DIODE PIN CONNECTION 2 CATHO DE ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb= 25°C F \o t Operating and Storage Tem perature Range T j- T stg ZC2800,ZC2811,ZC5800


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    PDF ZC2800 ZC2811 ZC5800 ZC5800 IR 3109

    Untitled

    Abstract: No abstract text available
    Text: 3 7 b f i 522 DD 2 0 1 1 E S 47 H P L S B a i GEC P L E S S E Y FEBRUARY 1994 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating


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    PDF DS2464 MV6639 MV6639

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


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    PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


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    PDF BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


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    PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    ZC2800

    Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
    Text: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.


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    PDF OT-23 ZC2800 ZC2810 10fiA ZC2811 ZC5800 E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E