SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Search Results

LLE18100X

Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES

epsilam 10

Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

2N5320

Abstract: 2N5321 2N5322 2N5323
Contextual Info: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

2N5320

Abstract: 2N5321 2N5321 THOMSON 2N5322 2N5323
Contextual Info: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

2N1893

Abstract: 100khz 5v transistor npn
Contextual Info: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

2N4300

Contextual Info: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic

2SA816

Abstract: 2SC1626 BOX69477 COB20 MIPO
Contextual Info: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED

2SC1729

Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •

2SC1947 equivalent

Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

air variable capacitor

Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES

transistor D 2331

Abstract: 2331 TRANSISTOR T31B
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: M 2N 1893 NPN SILICON PLANAR M IC R O EPITAXIAL TRANSISTOR EL-ECSnrFRQrsllCSS CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

2SA816

Abstract: 2SC1626 2SC16
Contextual Info: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED

2SC1626

Abstract: 2SA816
Contextual Info: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED

2sc1968

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W

2sc4624

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W

2SC730

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

2SC730

Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.

2SC2694

Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •